IRL2505SPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5000pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 54A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	104A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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<h2>Introduction</h2>The IRL2505SPBF is a power MOSFET with a nominal drain current of 40A. It is a vertical DMOSFET (V-DMOS) device composed of a single-power MOSFET in a plastic SOT-227 package (.68 mm max.). It is produced by International Rectifier, a company specializing in high voltage and radio frequency MOSFETs. The main advantage of this device is its low on-resistance of 0.88 ohm, which offers excellent efficiency performance.<h2>Application Field and Working Principle</h2>The IRL2505SPBF is primarily used for high efficiency DC-DC converters, Selects, SRCs, OR-PINGS and other related switching applications. This MOSFET is designed for low-resistance switching applications using a single unipolar voltage applied to the drain and source contacts. The increased switching speed allows for devices to be operated at higher frequencies, which is important for ripple and efficiency considerations.The device has a very low on-state drain-to-source resistance (RDSon) of 0.88 ohms, which enables higher efficiency operation. The turn-on threshold voltage of the device is typically 1.2 V and the maximum gate-to-source voltage (VGDM) is 18V. It is important to note that this MOSFET has a high gate capacitance (Ciss) of 1960 pF, which is important for ripple and noise considerations.The IRL2505SPBF has a relatively soft switching characteristics which minimizes electro-magnetic interference and resonance effects. The device features a stable threshold voltage, excellent high frequency switching performance, and low switching losses. It also has a high frequency switching capability up to 1MHz, which is ideal for high power applications.In terms of its working principle, the IRL2505SPBF is a single gate, n-channel MOSFET with a dual gate structure. The gate voltage is applied to both sources and the body is connected to the bulk/source instead of being connected to the drain. When the gate voltage is applied, an electric field is established between the drain and the source, resulting in a conductive channel of carriers, enabling current to flow.<h2>Conclusion</h2>The IRL2505SPBF is a high power, low-resistance, MOSFET designed for DC-DC converters and other related switching applications. It offers excellent efficiency performance and has a very low RDSon value of 0.88 ohms. It has an excellent high frequency switching capability up to 1MHz, which is ideal for power applications. The device features a stable threshold voltage, excellent high frequency switching performance, and low switching losses. Overall, the IRL2505SPBF is a great choice for any high-power MOSFET application.

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