| Allicdata Part #: | IRL2910STRRPBF-ND |
| Manufacturer Part#: |
IRL2910STRRPBF |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 55A D2PAK |
| More Detail: | N-Channel 100V 55A (Tc) Surface Mount D2PAK |
| DataSheet: |  IRL2910STRRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 1.14108 |
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
| FET Feature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRL2910STRRPBF is a single N-MOSFET that has been recently released by International Rectifier, a leading innovator of power semiconductor solutions. The device is ideal for a wide range of applications, especially those that require a low on-resistance. This article will discuss the IRL2910STRRPBF’s application field and its working principle.
Application Field
The IRL2910STRRPBF is an ideal choice for a wide range of applications. It is well suited for portable devices due to its low on-resistance and low Vgs threshold. It is also EXTREMELY suitable for server/storage applications, due to its robust on-resistance and low gate charge. Additionally, the device is well suited for industrial applications, due to its low on-resistance, low gate charge, and low VGS threshold. As such, the IRL2910STRRPBF is an ideal choice for a wide range of applications.
Working Principle
The IRL2910STRRPBF is a single N-MOSFET that works in accordance with the principles of metal-oxide-semiconductor devices. The device is composed of two parts: the channel and the gate. The channel is a semiconductor material, typically silicon, and is located between the source and drain. The gate is a metal that is placed over the channel. The gate holds a charge, which is responsible for controlling the flow of electrons through the channel. When there is a voltage applied to the gate, the electrons are either allowed to flow, or blocked from flowing. This is how the IRL2910STRRPBF works.
Conclusion
The IRL2910STRRPBF is a single N-MOSFET device that is well suited for a wide range of applications. It is especially well suited for portable devices, server/storage applications, and industrial applications, due to its low on-resistance, low gate charge, and low VGS threshold. The device works in accordance with the principles of metal-oxide-semiconductor devices. The device is composed of two parts: the channel and the gate. The gate holds a charge, which is responsible for controlling the flow of electrons through the channel. This article discussed the IRL2910STRRPBF’s application field and its working principle.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRL2703STRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
| IRL2505S | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 104A D2PA... |
| IRL2703S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 24A D2PAK... |
| IRL2203NL | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A TO-2... |
| IRL2505L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A TO-2... |
| IRL2910L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A TO-2... |
| IRL2203NSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 116A D2PA... |
| IRL2203NSTRR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A D2PA... |
| IRL2203STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
| IRL2203STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
| IRL2505STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
| IRL2505STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
| IRL2703STRL | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 24A D2PAK... |
| IRL2703STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
| IRL2910STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A D2PA... |
| IRL2703SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
| IRL2203NSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A D2PA... |
| IRL2910SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 55A D2PA... |
| IRL2505SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
| IRL2203NLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A TO-2... |
| IRL2505STRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
| IRL2203NPBF | Infineon Tec... | -- | 1686 | MOSFET N-CH 30V 116A TO-2... |
| IRL2505PBF | Infineon Tec... | -- | 3210 | MOSFET N-CH 55V 104A TO-2... |
| IRL2505STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 55V 104A D2PA... |
| IRL2203NSTRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 30V 116A D2PA... |
| IRL2910STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 100V 55A D2PA... |
| IRL2703PBF | Infineon Tec... | -- | 4580 | MOSFET N-CH 30V 24A TO-22... |
| IRL2910PBF | Infineon Tec... | -- | 9263 | MOSFET N-CH 100V 55A TO-2... |
| IRL2910STRRPBF | Infineon Tec... | 1.27 $ | 1000 | MOSFET N-CH 100V 55A D2PA... |
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