IRL2703STRR

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRL2703STRR is a Power MOSFET produced by International Rectifier. This type of Power MOSFET is a p-channel MOSFET, which is manufactured by combining an extrinsic field-effect transistor (FET) with a gate structure. This gate structure consists of a layer of an intrinsic (bulk) p-channel MOSFET mounted on top of a silicon nitride layer. The IRL2703STRR is a high-side MOSFET, which makes it especially suitable for use as a high-side switch in automotive and other harsh environments.The IRL2703STRR is a 40 V rated device. This high voltage rating is achieved by the use of an extra n-channel FET which is connected to the source and gate of the main p-channel FET. This extra n-channel FET provides a high level of immunity from static voltages, thereby making the IRL2703STRR suitable for use in automotive applications. The IRL2703STRR has a maximum drain-source on-state resistance of 0.067 ohms and a maximum drain-source breakdown voltage of 40 V.The IRL2703STRR is suitable for use in many different types of applications. It is commonly found in automotive applications, as it provides high reliability in difficult operating environments. It is also used in industrial applications, as it is a very reliable and stable device. It is also used in consumer electronics, such as audio amplifiers and motor drives.The working principle of the IRL2703STRR is based on the same principle of operation as other MOSFETs. When the gate voltage is above the threshold voltage, current flows from the drain to the source. The drain current is then controlled by the gate-source voltage. The amount of current flowing depends on the amount of voltage applied to the gate. When the gate voltage is below the threshold voltage, the MOSFET is in the off-state and no current will flow.The IRL2703STRR is a very reliable and stable device, making it suitable for use in many different types of applications. It is easy to use and provides excellent performance. It is a good choice for use in automotive and industrial applications, as it is able to withstand harsh operating conditions. It is also perfect for use in consumer electronics, as it offers reliable operation in a wide range of conditions.

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