IRL2203NSTRRPBF

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3290pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	116A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRL2203NSTRRPBF is a silicon n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is a member of the International Rectifier family. It is through-hole, surface mountable, and RoHS compliant, and is specialized for power management applications. This device is known as a MOSFET because it utilizes a MOS gate structure, with a lower impedance gate that better enables more efficient thermal management than competing devices.The IRL2203NSTRRPBF is part of the single MOSFET family, meaning that it contains a single microscopic internal element with a single drain and a single source. This MOSFET is a three-terminal, normally-on device that has an integral substrate with a low resistance path between its drain and source, enabling high current and low on-resistance. The device works by utilizing a voltage to activate and inactivate a MOSFET, allowing or denying current from flowing from the drain to the source.The IRL2203NSTRRPBF\'s main application field is as a switch for DC/DC converters, for higher efficiency applications thanks to its low RDSon (total gate-source on-state resistance) and integrated ESD (electrostatic discharge) protection. It is also used when designing high-reliability voltage control circuits, due to its low total gate charge, which keeps high-frequency switching losses low. Furthermore, this MOSFET\'s fast switching characteristics, with a turn-on/turn-off speed of 0.7/0.45 nanoseconds, makes it suitable for switching applications that require precise timing feedback signals.The IRL2203NSTRRPBF contains an on-resistance of 9.5 mΩ at a 10-V gate voltage and a 25°C temperature, and a maximum drain current rating of 75 A at a 25°C temperature. Furthermore, its maximum junction temperature rating is 150°C, and its gate-power supply voltage rating is 20 V, making it suitable for high-power applications in which heat dissipation is a priority.To summarize, the IRL2203NSTRRPBF is a n-channel MOSFET that is part of the single MOSFET family. It is specialized for power management applications, including switching for DC/DC converters, high-reliability voltage control circuits, and fast switching operations. With a maximum on-resistance of 9.5 mΩ, maximum drain current rating of 75 A, maximum junction temperature rating of 150°C, and gate-power supply voltage rating of 20 V, the device is suitable for high-load, high-power applications.

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