IRL2203NLPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRL2203NLPBF is a silicon-based MOSFET transistor manufactured by International Rectifier. It is a surface-mount device featuring a low gate-charge with fast switching performance and low on-state resistance. This makes it well-suited for both switched-mode power supplies (SMPS) and power-conversion applications such as electric-vehicle chargers, hard-switching circuits, and motor-control circuits.

The IRL2203NLPBF has a very low threshold voltage (-4V), a maximum drain-to-source current of 59A, and a maximum drain-to-source voltage range of up to 100V. These features make it ideal for applications that require precise control of power levels and prompt response times.

The IRL2203NLPBF is a N type enhancement mode field-effect transistor (FET) built on a single-die construction with its drain and source connections. It is part of a larger family of transistors, the IRL2203 series, which includes N- and P-Channel enhancement-mode FETs as well as logic level Gate-Controlled FETs. The IRL2203NLPBF has a maximum operating temperature of -55°C to 175°C and must be used in a ventilated environment.

The IRL2203NLPBF provides excellent switching performance due to its low Table 2-2 on-state resistance (RDS(on) ) and low gate charge (Qgs). This reduces switching losses, which in turn allows for improved efficiency and higher output power capabilities, making it well-suited for high-power applications.

Due to its low threshold voltage, the IRL2203NLPBF can be used in a variety of switched-mode power supplies (SMPSs), including buck, boost, and flyback topologies. It is also suited for DC/DC converters, voltage-regulator modules (VRMs), and other types of power-conversion applications such as EV chargers and motor-control circuits.

In addition, the IRL2203NLPBF has a fast switching speed and can operate at high frequencies (up to 20MHz). This makes it ideal for high-speed applications such as wireless communication systems, wireless charging systems, and switching power supplies.

The IRL2203NLPBF’s working principle is essentially similar to other FET transistors. When a suitable voltage is applied to the gate via a suitable gate driver, the channel of the transistor is turned on and electrons flow from the source to the drain. This, in turn, allows current to flow through the channel, which then powers the load circuit.

The amount of current that will flow through the channel is dependent on the voltage applied to the gate as well as the voltage drop across the transistor (between the source and the drain). It is also largely dependent on the size of the channel, which depends on the width (W) and the length (L) of the transistor.

The IRL2203NLPBF’s capability to provide very low on-state resistance makes it ideal for high-current applications. This is because it has a very low static power consumption, thus allowing for improved efficiency, better heat dissipation, and higher output power capabilities.

In addition, the IRL2203NLPBF’s fast switching speed makes it ideal for high-frequency applications. In such cases, the fast switching speed allows for better control over the power levels and more precise response times. This is because the transistor can quickly respond to changes in the gate voltage, which in turn enables better control over the output current.

Finally, due to its low-voltage threshold and its ability to support currents up to 59A, the IRL2203NLPBF is well-suited for a wide range of voltage-regulator modules (VRMs), buck, boost, and flyback topologies, and other power-conversion applications. This makes it an ideal choice for a variety of both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference