IRL2703S Allicdata Electronics
Allicdata Part #:

IRL2703S-ND

Manufacturer Part#:

IRL2703S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 24A D2PAK
More Detail: N-Channel 30V 24A (Tc) 45W (Tc) Surface Mount D2PA...
DataSheet: IRL2703S datasheetIRL2703S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL2703S is a high-performing silicon-carbide based Field-Effect Transistor (FET) with a single-die construction. It is optimized for a wide range of current sourcing and current sinking applications. The device features a low on-state resistance (RDS(ON)), high-speed switching performance (10 nano-seconds), and an excellent high-temperature performance. Furthermore, it is available in both TO-220 and TO-263 packages.

The IRL2703S is a p-channel, Enhancement Mode Power MOSFET (E-mode) which uses a silicon-carbide based epitaxial structure. It has a typical drain-source breakdown voltage (BVDSS) of 30V, a typical gate-source threshold voltage (VGS) of -1.90V, a typical channel temperature of 150°C , a typical drain current (ID) of 57A, and a typical Capacitance (CISS) of 98pF.

The IRL2703S can be used in many different applications, such as power conversion (DC/DC), switching regulators, rectification and power supply circuits. It is also used in automotive and solar power systems, home appliances (air-conditioners and refrigerators), and telecommunications systems. It is well-suited for high-temperature operating conditions because it has an exceptionally high temperature performance and is designed for high-speed switching performance.

The working principle of the IRL2703S is based on the principle of voltage control. A voltage is applied across the Gate-Source terminals (VGS) in order to regulate the current flowing between the Drain and Source terminals (ID). When the VGS is greater than the gate threshold voltage (VTH), then the MOSFET will be turned ON and it will allow current to flow from the Drain to the Source. On the other hand, when the VGS is less than the gate threshold voltage, then the MOSFET will be turned OFF and it will not allow any current to flow.

The IRL2703S is an excellent choice for power applications since it is able to handle large currents, has excellent temperature performance, and has very fast switching times. Its high performance and reliability make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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