IRL2910L Allicdata Electronics
Allicdata Part #:

IRL2910L-ND

Manufacturer Part#:

IRL2910L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 55A TO-262
More Detail: N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Throu...
DataSheet: IRL2910L datasheetIRL2910L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL2910L is a single enhancement-mode N-channel power field-effect transistor (FET). FETs are versatile, excellent switching and amplifying devices, and as a type of transistor, have been widely used in modern electronic applications. This article will take a look at the typical application field and working principle of the IRL2910L.

What is the IRL2910L?

The IRL2910L is a high-performance power field-effect transistor (FET) that provides outstanding switching performance, controllability, and low on-resistance. It has a maximum drain current rating of 16A, a maximum drain-source voltage rating of 38V, and a maximum gate threshold voltage of 4.5V. The IRL2910L also has a typical power dissipation of 50W and a typical gate charge of 41nC.

IRL2910L Application Field

Due to its excellent switching performance, the IRL2910L is widely used in a wide range of applications. It is often used in applications such as motor control, power converters, power supplies, and other switching circuits. It is also suitable for integrating with other control circuits such as ARM microcontrollers. The IRL2910L is especially suitable for DC-DC converters which require high-speed switching, low switch-node voltage drop and low on-resistance. Due to its excellent switching and thermal performance, it is also widely used in automotive, industrial, and consumer electronics.

IRL2910L Working Principle

The IRL2910L is an enhancement-mode FET, meaning that it is normally off, and to turn it on, the gate voltage must be greater than the threshold voltage. The majority carriers in the channel region are electrons, and electrons flow from the source to the drain when the FET is on. When the gate voltage increases to the threshold voltage, the FET is turned on and the channel forms between the source and the drain. As the gate voltage continues to increase, the width of the channel increases and more electrons are allowed to flow from the source to the drain, thus increasing the drain current. When the gate voltage is decreased, the channel collapses and the drain current decreases.

Conclusion

The IRL2910L is a single enhancement-mode N-channel power field-effect transistor (FET) that provides outstanding switching performance, controllability, and low on-resistance. It is suitable for a wide range of applications, such as motor control, power converters, power supplies, and DC-DC converters. The IRL2910L works by turning on and off according to the gate voltage, allowing electrons to flow from the source to the drain when the FET is on. This article has looked at the application field and working principle of the IRL2910L and it is hoped that it has provided a useful overview of the device.

The specific data is subject to PDF, and the above content is for reference

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