IRL2703STRLPBF Allicdata Electronics
Allicdata Part #:

IRL2703STRLPBF-ND

Manufacturer Part#:

IRL2703STRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 24A D2PAK
More Detail: N-Channel 30V 24A (Tc) 45W (Tc) Surface Mount D2PA...
DataSheet: IRL2703STRLPBF datasheetIRL2703STRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
FET Feature: --
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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IRL2703STRLPBF is an encapsulated high-performance power MOSFET. It is based on advanced HEXFET® technology, using the latest in advanced MOSFET process improvements to provide good performance and safe operation.

The IRL2703STRLPBF utilizes a unique high-side and low-side control design to make it ideal for high-side and low-side driving applications. With the built-in Mihama protection feature, it is also suitable for bidirectional power switches and high-side switching applications. It features a range of excellent features designed to provide maximum efficiency and efficiency.

Application field:

  • switching mode power supplies (SMPS)
  • portable computers and other equipments
  • cellular phones, PDAs and other personal electronics
  • load balancing and power supplies
  • high-frequency DC/DC converters
  • DC/AC inverters

Working principle:

The IRL2703STRLPBF consists of an N-channel depletion-mode insulated-gate field-effect transistor (FET) connected between the source and drain. It has a relatively low threshold voltage and is designed for low on-state resistance. The source and drain of the transistor are separated by an insulation layer. This layer creates a barrier between the source and drain and prevents the leakage of charges and current.

The device also contains an embedded zener diode that provides necessary voltage protection. When the voltage between the source and drain exceeds the zener voltage, the current is diverted away from the transistor, protecting it from destruction. The FET also contains a built-in MOSFET driver which assists in controlling the gate voltage. This helps make the IRL2703STRLPBF suitable for bidirectional switching applications.

The voltage across the source and drain determines the amount of current that flows through the transistor. When the voltage is below the threshold voltage, the FET is off and no current is allowed to flow. When the voltage is above the threshold, the FET is on and current flows through it.

The gate voltage of the transistor controls the amount of current that can flow. When the gate voltage is low, it acts as an open switch, allowing the current to flow freely. When the gate voltage is high, it acts as a closed switch, preventing any current from flowing. This makes the IRL2703STRLPBF suitable for both high-side and low-side switching applications.

The IRL2703STRLPBF is an excellent choice for applications that require a large amount of power, such as switching mode power supplies, portable computers, load balancing, and DC/AC inverters. It has built-in protection features that make it suitable for bidirectional switching applications, and its low on-state resistance ensures high efficiency and low standby power consumption.

The specific data is subject to PDF, and the above content is for reference

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