Allicdata Part #: | IRL2703STRLPBF-ND |
Manufacturer Part#: |
IRL2703STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 24A D2PAK |
More Detail: | N-Channel 30V 24A (Tc) 45W (Tc) Surface Mount D2PA... |
DataSheet: | IRL2703STRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRL2703STRLPBF is an encapsulated high-performance power MOSFET. It is based on advanced HEXFET® technology, using the latest in advanced MOSFET process improvements to provide good performance and safe operation.
The IRL2703STRLPBF utilizes a unique high-side and low-side control design to make it ideal for high-side and low-side driving applications. With the built-in Mihama protection feature, it is also suitable for bidirectional power switches and high-side switching applications. It features a range of excellent features designed to provide maximum efficiency and efficiency.
Application field:
- switching mode power supplies (SMPS)
- portable computers and other equipments
- cellular phones, PDAs and other personal electronics
- load balancing and power supplies
- high-frequency DC/DC converters
- DC/AC inverters
Working principle:
The IRL2703STRLPBF consists of an N-channel depletion-mode insulated-gate field-effect transistor (FET) connected between the source and drain. It has a relatively low threshold voltage and is designed for low on-state resistance. The source and drain of the transistor are separated by an insulation layer. This layer creates a barrier between the source and drain and prevents the leakage of charges and current.
The device also contains an embedded zener diode that provides necessary voltage protection. When the voltage between the source and drain exceeds the zener voltage, the current is diverted away from the transistor, protecting it from destruction. The FET also contains a built-in MOSFET driver which assists in controlling the gate voltage. This helps make the IRL2703STRLPBF suitable for bidirectional switching applications.
The voltage across the source and drain determines the amount of current that flows through the transistor. When the voltage is below the threshold voltage, the FET is off and no current is allowed to flow. When the voltage is above the threshold, the FET is on and current flows through it.
The gate voltage of the transistor controls the amount of current that can flow. When the gate voltage is low, it acts as an open switch, allowing the current to flow freely. When the gate voltage is high, it acts as a closed switch, preventing any current from flowing. This makes the IRL2703STRLPBF suitable for both high-side and low-side switching applications.
The IRL2703STRLPBF is an excellent choice for applications that require a large amount of power, such as switching mode power supplies, portable computers, load balancing, and DC/AC inverters. It has built-in protection features that make it suitable for bidirectional switching applications, and its low on-state resistance ensures high efficiency and low standby power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRL2703STRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2505S | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2703S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2203NL | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A TO-2... |
IRL2505L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A TO-2... |
IRL2910L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A TO-2... |
IRL2203NSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 116A D2PA... |
IRL2203NSTRR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A D2PA... |
IRL2203STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
IRL2203STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
IRL2505STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2505STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2703STRL | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2703STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2910STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A D2PA... |
IRL2703SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2203NSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A D2PA... |
IRL2910SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 55A D2PA... |
IRL2505SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A TO-2... |
IRL2505STRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NPBF | Infineon Tec... | -- | 1686 | MOSFET N-CH 30V 116A TO-2... |
IRL2505PBF | Infineon Tec... | -- | 3210 | MOSFET N-CH 55V 104A TO-2... |
IRL2505STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NSTRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 30V 116A D2PA... |
IRL2910STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 100V 55A D2PA... |
IRL2703PBF | Infineon Tec... | -- | 4580 | MOSFET N-CH 30V 24A TO-22... |
IRL2910PBF | Infineon Tec... | -- | 9263 | MOSFET N-CH 100V 55A TO-2... |
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