| Allicdata Part #: | IRL5602S-ND |
| Manufacturer Part#: |
IRL5602S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 24A D2PAK |
| More Detail: | P-Channel 20V 24A (Tc) 75W (Tc) Surface Mount D2PA... |
| DataSheet: | IRL5602S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 12A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRL5602S Application Field and Working Principle
The IRL5602S is a type of field-effect transistor (FET) called a metal–oxide–semiconductor field-effect transistor (MOSFET), which is an electronic device widely used in modern the form of semiconductor integrated circuits (ICs). Its application field includes current and voltage regulation, switching, amplifying, power control, and signal processing.
Applications of the IRL5602S can be found in computer/data processing systems, solid-state relays, telecommunications, navigation and instrumentation equipment, consumer electronics, and automotive applications. Its bidirectional current-regulating capabilities are best suited for load switching applications and power supplies. The short channel IRL5602S is designed to minimize switch losses, and provide superior performance in high-current systems.
Working Principle of IRL5602S
The IRL5602S works by using electrical charge to control the flow of electrons through the device. It consists of four layers of semiconductor materials formed into a three-dimensional structure. These layers are sandwiched together with the gate voltage and drain voltage in order to control the current flowing from drain to source, making it highly efficient and low-power.
The three layers of the IRL5602S are the source, the drain, and the gate. The source and drain layers, also known as terminals, are both positively charged. The gate is a negatively charged electrode that controls the amount of current passing through the device. When the gate voltage is applied, a field effect is created which causes some of the electrons to move from the source to the drain, creating a current flow.
When the gate voltage is increased, the electrons move further from the source, creating a larger current flow. Conversely, lowering the gate voltage decreases the amount of electrons moved, reducing the amount of current flow. By controlling the amount of voltage applied to the gate, the amount of current flowing through the device can be accurately controlled. This makes the IRL5602S ideal for applications such as voltage regulation, switching, and power control.
The IRL5602S is a single FET with an drain-to-source maximum voltage of 20V and a drain current of 3A. It has a high-side current sense resistor that enables an accurate load current monitoring and makes it ideal for load switching and current-limiting circuit applications. Its short channel structure ensures fast rise and fall times, making it ideal for high-speed applications.
Advantages of IRL5602S
The main advantage of the IRL5602S is its bidirectional current-regulating capabilities. Because of this, devices based on the IRL5602S can be used much more conveniently than other types of devices that require a full set of power supplies to achieve the same level of control. Additionally, devices based on the IRL5602S have a much higher power efficiency than other types of transistors.
The IRL5602S can also be used to provide powerful power control and signal processing capabilities. With its fast switching capabilities, it can be used to accurately control the on and off times of signals. The short channel design of the IRL5602S also enables it to operate with much lower power than other FETs, making it ideal for battery-powered applications.
Furthermore, because of the IRL5602S’s low-noise performance and low-power consumption, it is perfect for use in audio processing circuits. The MOSFET is also very small in size and its low-cost makes it ideal in applications such as consumer electronic products, telecommunications, and automotive systems.
Conclusion
The IRL5602S is a type of single FET that is widely used in various applications such as current and voltage regulation, switching, amplifying, power control, and signal processing. It has a high-side current sense resistor that enables an accurate load current monitoring, which makes it ideal for applications such as load switching and current-limiting. Additionally, its short channel structure ensures fast rise and fall times and its low-noise performance and low-power consumption makes it ideal for use in audio processing circuits.
The specific data is subject to PDF, and the above content is for reference
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IRL5602S Datasheet/PDF