IRL540STRL

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	64nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	77 mOhm @ 17A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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This article focuses on the IRL540STRL application field and working principle, covering its use in transistors, FETs and MOSFETs. The IRL540STRL is a single N-Channel MOSFET designed to provide low on-resistance and low gate-charge, and is used in a variety of electrical and electronic applications. The IRL540STRL belongs to the IRF540STRL series of transistors and has a higher current capacity than many other types of transistors. The device is commonly used in voltage-regulated power supplies, motor controllers, gate driver circuits, and battery-powered applications. The IRL540STRL is a fairly simple transistor with only three pins; it has the ability to operate at high frequencies and its internal structure is designed to facilitate electron transitions. It is a single N-channel MOSFET and features a 200 volt rating and a 1.5 ampere current rating. The Internal Structure of the IRL540STRL The IRL540STRL consists of a semiconductor substrate with two N-Channel MOSFETs coupled to it. The two MOSFETs are connected in series, creating an N-channel MOSFET with a single gate, source and drain terminals. The device also features an integrated body diode which can be used to provide voltage protection. The Working Principle of the IRL540STRL The working principle of the IRL540STRL is based on the fact that when a voltage is applied to the gate, electrons will accumulate at the interface between the two MOSFETs, creating a voltage potential that allows current to flow from the drain to the source. By controlling the amount of voltage applied to the gate, the level of current flowing through the device can be regulated. When the gate voltage is low, there is very little current flowing through the device, due to the low number of electrons available. However, by increasing the gate voltage, more electrons are allowed to accumulate, resulting in a higher current flow. Applications of the IRL540STRL The IRL540STRL is generally used in a variety of applications such as gate driver circuits, voltage-regulated power supplies, motor controllers, and battery-powered applications. As the device has a low on-resistance and low gate-charge, it can be used to regulate current in many different types of circuits. It is also commonly used in switching applications, such as in DC-DC converters, which require the use of transistors for power control. Additionally, the device is also used in linear applications, such as LCD or LED displays, where it can be used to regulate the current for the display elements. ConclusionThe IRL540STRL is a single N-channel MOSFET designed to provide low on-resistance and low gate-charge, and is used in a variety of electrical and electronic applications. The device has a fairly simple internal structure, consisting of a semiconductor substrate with two N-Channel MOSFETs connected in series. The working principle of the IRL540STRL is based on the accumulation of electrons at the interface between the MOSFETs, allowing current to flow from the drain to the source. The IRL540STRL is generally used in a variety of applications such as gate driver circuits, voltage-regulated power supplies, motor controllers, and battery-powered applications.

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