Allicdata Part #: | IRL530STRRPBF-ND |
Manufacturer Part#: |
IRL530STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 15A D2PAK |
More Detail: | N-Channel 100V 15A (Tc) 3.7W (Ta), 88W (Tc) Surfac... |
DataSheet: | IRL530STRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRL530STRRPBF Application Field and Working Principles
The IRL530STRRPBF is an N-channel enhancement-mode Field- Effect Transistor (FET). It is a relatively new type of transistor and provides performance advantages over traditional transistors due to its unique construction. This type of transistor is often used in application areas such as power supplies, digital-to-analog converters, switched-mode power supplies, amplifiers, and DC-controlled switching circuits.
This type of transistor is typically constructed of a single layer of silicon, which is used as a gate and provides insulation between the source and drain terminals. This layer of silicon is coated with an insulating layer, such as oxynitride, to reduce the leakage currents that may occur. The gate area is then covered with an oxide layer, which insulates the gate from the rest of the structure, and then a metal source is placed over the gate. This source is connected to the drain terminal, and the gate is connected to the substrate.
The IRL530STRRPBF works similarly to a conventional transistor in that electricity flows between the source and drain when the gate is biased. In this type of transistor, current is controlled by the gate voltage, rather than the traditional current control. This allows for greater flexibility in controlling the circuit parameters, as well as the ability to operate at higher frequencies.
The IRL530STRRPBF also has the advantage of being able to dissipate more heat than a traditional transistor. Since the insulating layer is thinner than in a traditional device, more heat can be transferred from the source to the drain. This type of device is also better able to withstand higher voltages and temperatures than traditional transistors.
The IRL530STRRPBF is used in a wide variety of applications, particularly for power supplies and switched-mode power supplies. This type of transistor is also used in DC-controlled switching circuits, as well as amplifiers, digital-to-analog converters, and more.
Overall, the IRL530STRRPBF provides good performance and flexibility in a variety of applications. Its unique construction allows it to operate at higher frequencies and dissipate more heat than traditional transistors. This type of device is also versatile and can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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