IRL530STRR Allicdata Electronics
Allicdata Part #:

IRL530STRR-ND

Manufacturer Part#:

IRL530STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 15A D2PAK
More Detail: N-Channel 100V 15A (Tc) 3.7W (Ta), 88W (Tc) Surfac...
DataSheet: IRL530STRR datasheetIRL530STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRL530STRR transistors, which are classified as field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETS), have become increasingly popular in recent years due to their high-performance, low power consumption and low cost. The IRL530STRR is an N-Channel Enhancement-Mode Field-Effect Transistor (MOSFET) which has been designed and manufactured specifically for applications that require precise control over power and signal processing. The IRL530STRR is built upon a low-voltage substrate with a low impedance source, and the source pins are connected to a common ground for effective power control and noise reduction. Additionally, the IRL530STRR features an extremely low threshold voltage (Vth) of only 4V and a low on-resistance of 0.44 ohms. The low Vth and on-resistance allow for ease of operation with low-voltage sources, making this MOSFET optimal for use in automotive, medical, and industrial applications.The IRL530STRR functions in the same way as other MOSFETs, by using a series of electrical gates to control an electrical current. The gates, also known as the source, drain, and gate, are connected to three separate leads. When activated, the source lead sends a current to the drain, which charges up the gate. This triggers the MOSFET to conduct electricity through the source for a fixed amount of time, known as the reverse recovery time (TRR). Additionally, the current that is allowed to pass through the MOSFET is limited by its on-resistance, which is the amount of resistance the MOSFET provides to the electrical current. The main advantages of the IRL530STRR is that it is highly efficient and cost effective, which makes it a great choice for applications requiring precise power and signal control. Additionally, the low voltage substrate and low threshold voltage also allows it to be used in applications where low power consumption is required, such as in medical diagnostics. The IRL530STRR is available in a variety of packages and sizes, which allows users to choose the one that is best suited for their specific application. Additionally, its low on-resistance and low reverse recovery time make it a great choice for applications that require quick switching times, such as mobile devices and computers.Overall, the IRL530STRR is a highly reliable and efficient MOSFET that is well-suited for a variety of applications requiring precise control over power and signal processing. The low voltage substrate, low threshold voltage, and low on-state resistance make it an ideal choice for those applications demanding low power consumption and quick switching times. Additionally, its package and size availability make the IRL530STRR a great option for users searching for a customizable solution for their particular applications.

The specific data is subject to PDF, and the above content is for reference

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