IRL530L Allicdata Electronics
Allicdata Part #:

IRL530L-ND

Manufacturer Part#:

IRL530L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 15A TO-262
More Detail: N-Channel 100V 15A (Tc) Through Hole TO-262-3
DataSheet: IRL530L datasheetIRL530L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRL530L is an advanced type of field-effect transistor (FET) device, which is a type of single-terminal semiconductor. This device is a low-noise, low-side N-channel FET with an “L” suffix in the part number. It is commonly used in various applications, such as power management, integrated circuits, audio, and load switching. The IRL530L can be used in both digital and analog circuits, and is commonly used in variable-gain amplifier (VGA) circuit designs.

The IRL530L is based on the metal-oxide semiconductor field-effect transistor (MOSFET) technology, which is used to control a wide range of power-related functions. This technology uses integrated circuits and transistors to facilitate the flow of electrical current from the source to the drain. The idea behind MOSFETs is to increase power efficiency without any power loss. They are used in a variety of circuit designs, and are also used for switching loads and as drivers for other switching devices.

The IRL530L feature high-current capability, low temperature dependence, and good dielectric isolation performance, making them one of the most commonly used FETs. It also features a low on-resistance and stable performance over a wide temperature range. Other features of the IRL530L include a fast switching speed, and the ability to handle large voltages. The device also features low power consumption, and high ESD (electrical static discharge) protection.

The IRL530L uses a unique FET structure, which is optimized to reduce overshoot and ringing on the output waveform. This improves the circuit’s overall response time. The device also has an RDS on-resistance of 55 milliohms (typically, with a drain voltage of 3 V and a gate voltage of 1.8 V), and an input capacitance of 7 pF.

The IRL530L provides reliable low-side drive for MOSFETs, bipolar transistors, and other small signal devices. It is typically used as a switching device to switch loads quickly and keep voltage levels from rising. The device can also be used in power conversion circuits and motor controller applications.

The IRL530L is well-suited for power management applications, due to its fast switching speeds, low on-resistance, and its ability to handle large voltages. It is also well-suited for integrated circuit manufacturers, as it reduces the amount of parasitic capacitance and offers a high level of isolation.

The IRL530L is also useful in audio and load switching applications, due to its low noise and fast switching speeds. The device can provide high-frequency load switching, low-noise audio switching, and voltage triggering in audio amplifiers and other applications.

In summary, the IRL530L is a single-transistor FET device which offers a variety of benefits for applications in the digital and analog fields. Its low temperature dependence, low noise, low resistance, and high current capability make it an attractive choice for a variety of applications. It is especially well-suited for power management, integrated circuit manufacturing, and audio and load switching applications.

The specific data is subject to PDF, and the above content is for reference

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