Allicdata Part #: | IRL510STRR-ND |
Manufacturer Part#: |
IRL510STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A D2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa... |
DataSheet: | IRL510STRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL510STRR is an n-channel enhancement-mode vertical single power MOSFET (metal oxide semiconductor field-effect transistor) designed for switching and power management applications. The IRL510STRR is a voltage-controlled device that uses a single vertical MOSFET process that combines low on-resistance with fast switching speed to provide superior performance in low-voltage, low-current applications. It offers a high level of protection against transient voltage spikes, making it ideal for use in power supplies and motor control applications.
The IRL510STRR is a power transistor that uses a single MOSFET device to provide high current conduction and low on-resistance. Its low on-resistance is enabled by the vertical structure of the device, which allows for a very low RDS(On). It also features an over-current limiting feature that will maintain its RDS(On) as low as possible to prevent overloading of the device. The IRL510STRR is also able to withstand high transient voltages due to its high avalanche rating, making it suitable for applications in high voltage environments. Additionally, the device is protected by a robust package that is designed to aid heat dissipation and minimize the chances of thermal runaway.
The IRL510STRR is an ideal choice for applications requiring low on-resistance and fast switching speeds. It is capable of switching with low losses and providing high current ratings, making it suitable for use in power supplies, motor control circuits, and other high current, high voltage applications. The IRL510STRR is also designed to meet the latest safety requirements, making it suitable for use in a variety of industrial and consumer applications.
The IRL510STRR utilizes the standard MOSFET working principle of source, gate, and drain. The source is the positive terminal, gate is the control terminal, and drain is the negative terminal. When a positive voltage is applied to the source and gate, electrons are attracted to the drain, causing current to flow. The amount of current flow is proportional to the voltage applied to the gate, allowing the device to be used in a variety of applications requiring precise control of current flow.
The IRL510STRR is designed to provide low on-resistance, high current handling capacity, and fast switching speeds in applications where high power and reliability are of the utmost importance. Its robust packaging, fast current handling rate, and superior protection against transient voltages make it an ideal choice for motor control and other high-power applications. It can also be used in low-voltage, low-current applications, making it a versatile choice for applications in a wide variety of different fields.
The specific data is subject to PDF, and the above content is for reference
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