Allicdata Part #: | IRL540NL-ND |
Manufacturer Part#: |
IRL540NL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 36A TO-262 |
More Detail: | N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Throu... |
DataSheet: | IRL540NL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRL540NL is a powerful type of Field Effect Transistor (FET) with a wide range of applications. The main features of the device are its very low on-resistance, low gate-to-source capacitance, low input volatage, and wide operating temperatures. It is a single depletion mode FET and is available in P-channel and N-channel configurations, making it suitable for different applications.
This type of transistor is commonly used in gain stages in audio and video circuits, inverters, H bridges, logic circuits, power converters, motor control circuits, and high-frequency amplifiers. The device also has applications in battery-powered devices, automotive electronics, and computing.
The transistor is made up of a source, gate and drain, which are connected to a silicon substrate. In the case of a P-channel FET, the source is typically connected to the negative supply while the drain is connected to the positive supply. For an N-channel FET, the source is connected to the positive supply while the drain is connected to the negative supply. There is also the gate which is responsible for controlling the current flow between the source and the drain. The gate can be controlled with a voltage or current, which allows it to be used in high-frequency applications.
The working principle of an FET is based on the field effect. The field effect occurs when an electric field is applied to the gate and it modulates the current flow between the source and the drain. The electric field causes the electrons in the channel to move from the source to the drain. This results in an increase or decrease in the current flowing through the device, depending on the direction of the field.
The IRL540NL FET is designed to provide optimum performance in a wide range of applications. Its low on-resistance and low gate-to-source capacitance provide improved efficiency in power converters and motor control circuits. Its low input voltage ensures that the device is suitable for use in battery-powered applications. The wide operating temperatures allow the device to be used in automotive and industrial electronics. The FET is also suitable for high-frequency applications due to its low gate capacitance.
In summary, the IRL540NL FET is a versatile device with a wide range of applications. Its features make it suitable for use in audio and video circuits, inverters, H bridges, logic circuits, power converters, motor control circuits, and high-frequency amplifiers. It can also be used in battery-powered devices, automotive electronics and computing. The device works by modulating current flow between the source and the drain based on an electric field, allowing for improved efficiency and ease of use in many different applications.
The specific data is subject to PDF, and the above content is for reference
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IRL520STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
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