
Allicdata Part #: | IRL5602STRLPBF-ND |
Manufacturer Part#: |
IRL5602STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 24A D2PAK |
More Detail: | P-Channel 20V 24A (Tc) 75W (Tc) Surface Mount D2PA... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 12A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRL5602STRLPBF is a N-Channel Enhancement Mode Power MOSFET device from International Rectifier Corporation. This MOSFET comes in an industry-standard TO-220 package and offers very low "on-resistance" ratings and low gate charge characteristics. The N-Channel MOSFETs are designed for switch-mode power supplies, switching regulators, motor drivers and other high frequency switching power applications. It is also suitable for general hardware managed application.
The key features of the IRL5602STRLPBF are its very low on-resistance, fast switching speed, high input impedance and high pulse current ratings. It has a rated drain current of 30A, a gate-source voltage of +/-20V and a drain-source voltage of 60V. The device has a typical Threshold Voltage of 2.2V, a typical Gate charge of 3V- 12V and a typical rise and fall time of 5nS.
The working principle of the IRL5602STRLPBF is based on Metal Oxide Semiconductor Field Effect Transistor technology. A MOSFET device is a three-terminal semiconductor device. It consists of a source, gate and drain terminals. The source terminal is connected to the power supply, whereas drain is connected to the load. When the gate terminal is energized with a suitable input voltage, current flows through the source-drain channel.
In the IRL5602STRLPBF, the current flow is controlled by a gate voltage called the gate threshold voltage. In the absence of gate voltage, the channel is depleted of electrons, thus preventing current flow through it. When the gate voltage is applied, electrons will be injected into the channel, creating an inversion layer or conducting channel. The magnitude of this gate voltage required is known as threshold voltage.
In the IRL5602STRLPBF, the drain-source voltage determines the magnitude of current flow through it. A higher voltage difference increases the current flow, while a lower voltage decreases the current flow. The drain-source voltage is limited to 60V, thus providing protection against over voltage conditions. The gate-source voltage provides the control voltage for the MOSFET.
Apart from its specific application in power MOSFETs, the IRL5602STRLPBF is widely used for high frequency switching applications such as DC/DC converters, DC/AC inverters, motor drivers and other hardware managed applications. It is also suitable for lighting control, signal switching, and broadcast data transmission. The device is available in both surface-mount and through-hole packages.
In sum, IRL5602STRLPBF is a N-Channel Enhancement Mode Power MOSFET device from International Rectifier Corporation. It has very low on-resistance, fast switching speed, high input impedance and high pulse current ratings. It is suitable for switch-mode power supplies, switching regulators, motor drivers and other high frequency switching power applications as well as for lighting control, signal switching, and broadcast data transmission.
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