Allicdata Part #: | IRL540NSTRR-ND |
Manufacturer Part#: |
IRL540NSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 36A D2PAK |
More Detail: | N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Surfa... |
DataSheet: | IRL540NSTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL540NSTRR is a single N-Channel enhancement-mode power MOSFET developed by International Rectifier Corporation. It is designed to have superior switching performance with minimum on-state resistance and fast switching speeds. This device is a popular choice for many applications in both commercial and industrial settings where reliability is essential.
The IRL540NSTRR can be used in a variety of applications such as motor drives, HVAC, lighting and lighting controllers, UPS systems, switch-mode power supplies, snubber circuits, and interior automotive systems. It is also suitable for high-speed switching applications, making it an ideal choice for a wide range of applications. In addition, this device features an on-resistance which is over four times lower than comparable devices. This makes it ideal for low-noise and highly efficient power design applications.
The working principle of the IRL540NSTRR is based on the enhancement-mode of operation. This type of operation requires a gate voltage greater than the source voltage in order to turn the device on. The gate voltage determines the conductivity of the channel and the resistance between the source and drain. When the gate voltage is low, the drain-source resistance is high, and this prevents the flow of current. When the gate voltage is increased, it reduces the channel resistance and allows current to flow through the channel. This is the basic principle of operation for the IRL540NSTRR.
This MOSFET device also features an efficient body diode. This diode helps to protect the device from reverse current and assists in controlling the turn-on and turn-off behavior of the device. In addition, the IRL540NSTRR is designed to operate at a low gate capacitance, which allows for fast switching speeds and improved performance. In addition, it contains ESD protection which allows it to be used in circuits with greater power and reliability.
Due to its high level of performance and reliability, the IRL540NSTRR is an excellent solution for a wide range of applications. It is a low-cost component and provides an excellent performance to cost ratio. This device can be used in a variety of design solutions which require reliable switching and low noise operation. In addition, its flexibility makes it a good choice for applications where flexibility and cost savings is of the utmost importance.
In conclusion, the IRL540NSTRR is a single N-Channel enhancement-mode power MOSFET developed by International Rectifier Corporation. It has a low on-state resistance and fast switching speeds, which make it an attractive choice for many applications. This device also features an efficient body diode and ESD protection, which makes it suitable for use in circuits with greater power and reliability. Overall, the IRL540NSTRR is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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