Allicdata Part #: | IRL520NS-ND |
Manufacturer Part#: |
IRL520NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 10A D2PAK |
More Detail: | N-Channel 100V 10A (Tc) 3.8W (Ta), 48W (Tc) Surfac... |
DataSheet: | IRL520NS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL520NS is a compact MOSFET designed specifically for applications in automotive and telecommunication fields. It is made of two distinct semiconductor materials separated by a thin insulator layer. The MOSFET is a type of electrical switch that works by using a high voltage to close a circuit, allowing current to flow in one direction. The drain, gate, and source terminals are all connected to the MOSFET. When the gate is opened, current flows from the source to the drain. When the gate is closed, the source and drain circuits are disconnected and no current flows. Unlike other types of electrical switches, the IRL520NS does not require a large amount of pressure in order to close the circuit.
The IRL520NS is a single-ended MOSFET, meaning that it only has one source and one drain terminal. This type of MOSFET is typically used for low-power switching applications in automotive, telecommunication, and industrial control. The IRL520NS is made of two distinct semiconductor materials: a trench isolation layer and a depletion region. The trench isolation layer insulates the two semiconductor materials, preventing any current from passing through the device when it is off. The depletion region controls the electrical current that is allowed to pass through the device.
When the gate voltage is applied to the IRL520NS, the drain end of the device is pulled up towards the source end. This creates a conductive channel through which current can flow. The size of the conductive channel is determined by the gate voltage and is proportional to the quantity of electrical charge applied to the gate. By varying the gate voltage, the conductive channel can be adjusted to any size, allowing for precise control of the current flow through the device.
The IRL520NS also features protection from overvoltage and excessive current. The device includes a number of protection circuits that protect the device from becoming damaged due to sudden current surges or prolonged high voltages. Additionally, the device also includes a thermal shutdown circuit that is activated when the device overheats. This prevents damage due to overheating or prolonged exposure to high temperatures.
One of the main applications of the IRL520NS is in the automotive industry. The device is used in a variety of automotive systems, including engine control systems, transmission control systems, and fuel injection systems. In addition, the IRL520NS can be used in telecommunication systems, industrial control systems, sound systems, and even home automation systems.
The IRL520NS is a versatile device that is well suited for a variety of applications. Its low voltage and current ratings make it ideal for low-power switching applications, while its overvoltage and thermal shutdown circuits provide added protection. As a result, the IRL520NS is a cost effective and reliable switching device for a variety of automotive, telecommunication, and industrial control applications.
The specific data is subject to PDF, and the above content is for reference
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