Allicdata Part #: | IRL530NL-ND |
Manufacturer Part#: |
IRL530NL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 17A TO-262 |
More Detail: | N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Throug... |
DataSheet: | IRL530NL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL530NL is an Insulated Gate Bipolar Transistor (IGBT) with major advantages compared to equivalent silicon MOSFETs and bipolar transistors. It belongs to the class of N-channel Field-Effect Transistors (FET’s) and has a combination of bipolar and MOS output stages. It offers a much better power density than any traditional component, making them very useful for many applications.
The IRL530NL is mostly used for power management in electronic systems. It has high switching performance and low switching losses, making it ideal for a wide range of DC-DC power converters. It can also be used for pulse width modulation applications, such as motor drives and digital audio equipment.
The IRL530NL can also be used for AC motor control, low voltage power supply, and high frequency DC-DC converter applications. It has both a low input capacitance and an efficient power conversion capability. This makes it ideal for switching and noise reduction in many types of applications.
The IRL530NL is a rugged, highly transmissive device with very low gate charge and low input capacitance. It is designed to switch high-current power delivery applications as well as low-voltage data/switching applications. The IRL530NL has a high on-state current handling capability and low gate to emitter and drain to emitter leakage. This makes it suitable for a wide range of applications, from appliance control to military or aerospace applications.
The IRL530NL works by taking a voltage at the gate and uses a thin-oxide transistor to control the current flow from the power supply to the drain. The gate voltage is used to turn the device on, allowing current to flow from the power supply to the drain. The voltage level of the gate will determine the amount of current that can flow through the device. As the gate voltage increases, the current flow increases.
The IRL530NL is a versatile, low-power device with a wide range of applications. Its high switching performance and low switching loss make it ideal for high-current power delivery applications. The device’s low input capacitance keeps noise down and makes it particularly suitable for low voltage and high frequency applications.
The IRL530NL is the perfect choice for many applications, from appliance control to military and aerospace applications. It can be used for DC-DC power converters and pulse width modulation applications, as well as for switching and noise reduction in many types of applications. Its combination of bipolar and MOS output stages make it a particularly powerful choice for its size and operating temperature range. It also offers a wide operating range and a high level of reliability in even the most demanding environments.
The specific data is subject to PDF, and the above content is for reference
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