IRL510STRLPBF Allicdata Electronics
Allicdata Part #:

IRL510STRLPBF-ND

Manufacturer Part#:

IRL510STRLPBF

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 5.6A D2PAK
More Detail: N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa...
DataSheet: IRL510STRLPBF datasheetIRL510STRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.60000
10 +: $ 0.58200
100 +: $ 0.57000
1000 +: $ 0.55800
10000 +: $ 0.54000
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A field-effect transistor, or FET, is a type of transistor that is used in electronically-controlled circuits. The IRL510STRLPBF is a specific type of FET called a metal oxide semiconductor field-effect transistor (MOSFET). It is a type of FET that uses two terminals - a gate and a source - and is characterized by an extremely low input resistance. In contrast to other types of FETs, MOSFETs are capable of both high-voltage and low-voltage operations.

The IRL510STRLPBF is a type of single-channel MOSFET. It consists of source, drain and gate terminals, as well as a substrate. The source and drain are the part of the transistor\'s gate layer where current flow takes place. The gate terminal is used to control the current flow between the source and drain. When the gate voltage is higher than the source voltage, current flows through the transistor. Due to its single-channel design, the IRL510STRLPBF is ideal for applications where a minimum number of components are desired.

The IRL510STRLPBF is suitable for use in a variety of applications, including switching, amplifying and signal processing. It can be used in power supplies, electronic circuits, motor control systems, and medical equipment. Additionally, it is suitable for use in automotive and aviation electronics, as well as telecommunications and defense systems. It is also suitable for use in portable electronic devices such as cell phones and tablets.

The working principle of the IRL510STRLPBF can be understood by the following two points. Firstly, the transistor contains a source and a drain which are connected to form a channel. When a voltage is applied at the gate terminal, a thin inversion layer is formed at the interface between the source and drain. This inversion layer modulates the conductivity of the channel and allows electric current to flow through it. Secondly, the source and drain are connected in such a way that current flows only when a certain threshold voltage is applied to the gate terminal. This threshold voltage determines the conductive state of the transistor and therefore, its behavior.

The IRL510STRLPBF is a highly reliable and versatile transistor that is suitable for a variety of applications. It is capable of both high-voltage and low-voltage operations, making it ideal for use in a variety of circuit designs. Additionally, its single-channel design makes it an attractive choice for applications where a minimum number of components are desired. Its working principle is based on the formation of an inversion layer at the interface between the source and drain, which modulates the channel\'s conductivity and allows current to flow.

The specific data is subject to PDF, and the above content is for reference

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