IRL540NLPBF Allicdata Electronics
Allicdata Part #:

IRL540NLPBF-ND

Manufacturer Part#:

IRL540NLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 36A TO-262
More Detail: N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Throu...
DataSheet: IRL540NLPBF datasheetIRL540NLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL540NLPBF is a 55-volt, single N-channel power MOSFET with an integrated Schottky diode. It is designed for use in the power flow applications and high temperature operation in single- or dual-rail operation. The IRL540NLPBF is advanced process technology, which offers superior reliability, power and thermal performance. This makes the device suitable for reliability in high temperature and power applications, as well as satisfying harsh operational environments.

The IRL540NLPBF\'s unique design features advanced process technology, allowing them to be used in high temperature environments and high voltage power systems. It has excellent current carrying capacity for very low on-state resistance and high switching speed. The device also has a low threshold voltage along with a higher breakdown voltage, allowing for higher power operation in a wide range of applications. The MOSFET is also capable of handling higher transient currents, as well as offering superior thermal performance for extended operating conditions.

The IRL540NLPBF\'s operating temperature range is from -55°C to +125°C, and its thermal resistance is excellent at 550°C/W. It is also radiation hardened, making it suitable for aerospace, military and medical applications. The MOSFET is also ideal for industrial and automotive applications, offering superior thermal performance, superior current carrying capacity and superior breakdown voltage.

The IRL540NLPBF has several application fields. It can be used in telecom, industrial and medical applications, as well as being used in power conversion and power management. It can be used in automotive, aerospace and military systems, where its radiation hardened design makes it ideal for extreme environmental conditions. It is also ideal for home and office equipment and can be used to improve efficiency and reduce power consumption.

The IRL540NLPBF has a simple working principle. It is composed of semiconductors, which take either positive or negative charges depending on the gate voltage. When the voltage is high, the channels act like a resistor, allowing current to pass through. When the voltage is low, the channels close and the gate acts like an open switch, preventing current from flowing. In both instances, the device is essentially doing the same thing: controlling the flow of current in order to regulate power.

In conclusion, the IRL540NLPBF is a 55-volt, single N-channel power MOSFET with an integrated Schottky diode. It has an excellent current carrying capacity for very low on-state resistance and high switching speed, and its thermal resistance is excellent at 550°C/W. The IRL540NLPBF is suitable for many applications, including but not limited to telecom, industrial, medical, power conversion and power management, automotive, aerospace and military systems. The IRL540NLPBF has a simple working principle consisting of semiconductors, which take either positive or negative charges depending on the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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