Allicdata Part #: | IRL530STRL-ND |
Manufacturer Part#: |
IRL530STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 15A D2PAK |
More Detail: | N-Channel 100V 15A (Tc) 3.7W (Ta), 88W (Tc) Surfac... |
DataSheet: | IRL530STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRL530STRL is a single p-channel metal-oxide-semiconductor field effect transistor (MOSFET). It is named the IRL530STRL because the transistor is designed for use in high-current switching applications which require high power dissipation. The IRL530STRL has a maximum drain current of 7.5 amps, a maximum drain-source voltage of 30 volts, and a maximum gate-source voltage of 30 volts.
IRL530STRL has many applications due to its wide range of voltage and current capabilities. Common applications include motor speed control, driving high power loads, DC-DC converter designs, power conditioning, and power factor correction. The IRL530STRL is also suitable for use in switching designs requiring fast switching speeds, low switching losses, and good temperature stability.
The working principles of an IRL530STRL MOSFET are based on the principles of semiconductor physics. When an electrical voltage is applied to the gate of the IRL530STRL, a Metal-Oxide- semiconductor field effect (MOSFET) is formed within the transistor. The gate-oxide layer is a very thin insulating layer between the gate and the substrate which prevents current flow through the device and allows the gate-source voltage to control the current flow through the device. The source of the IRL530STRL is connected to ground and the drain is connected to whatever load is desired. The result of applying a voltage across the gate and drain of the IRL530STRL is that current can now flow from the source to the drain, thus controlling the current through the load.
When the gate voltage rises above the threshold voltage of the IRL530STRL, the current will start to increase with positive slope. But, when the voltage drops below the threshold voltage, the channel closes and the current will start to decrease. The channel is said to be in saturation when the drain-source voltage is higher than the threshold voltage. In saturation, any further increase in voltage will not result in an increase in current. When the gate source voltage is equal to the threshold voltage, the current through the device will remain constant.
Due to its low on-resistance, low voltage and high current capabilities, the IRL530STRL can provide high speed switching, high power handling, and low switching losses. The IRL530STRL is also very reliable and has a long lifespan. With its wide range of capabilities, the IRL530STRL is an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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