Allicdata Part #: | IXFC10N80P-ND |
Manufacturer Part#: |
IXFC10N80P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 5A ISOPLUS220 |
More Detail: | N-Channel 800V 5A (Tc) Through Hole ISOPLUS220™ |
DataSheet: | IXFC10N80P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PolarHV™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS220™ |
Package / Case: | ISOPLUS220™ |
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IXFC10N80P is a power MOSFET, which is rated and specified at maximum values of drain channels blocking voltage, drain source voltage and drain current. This MOSFET is designed in such a way to be very durable and reliable, capable of continuous operation, even at higher temperatures and voltages. This MOSFET also has high power capability. It exhibits low gate charge and low on resistance characteristics.
The IXFC10N80P is mainly used for switching and amplification applications. It is mainly used for power supply, motor and valve control, consumer Electronics, and regulator applications. This MOSFET is also used for automotive and industrial application, industrial heating applications, and so on.
The IXFC10N80P is a single N-Channel MOSFET. The device has three terminals; Drain, Source and Gate. In this MOSFET, the drain and the source are connected to the current carrying voltage sources, while the gate is connected to the control voltage signal. It is designed with an insulated gate to act as a gate dielectric layer, which controls the flow of current between the source and drain channels.
The working principle of the IXFC10N80P is relatively simple and easy to understand. In this MOSFET, an electric field is created between the gate and the source due to the presence of the gate voltage. When a positive gate voltage is applied on the gate channel, it creates a thin inversion layer above the surface of the source drain channel. This thin inversion layer acts as a switch, which helps in turning the device “On” and “Off”.
This MOSFET also has some unique features compared to the traditional bipolar transistors. It has a very low gate charge, which helps in improving operation efficiency. Moreover, this type of MOSFET exhibits low on resistance characteristics, which helps in minimizing power losses. Furthermore, the IXFC10N80P also has very high current carrying capability, which helps it to handle large current loads. In addition, it also has a very high maximum voltage rating, which makes it extremely safe for use in harsh environments.
In conclusion, the IXFC10N80P is a very useful and efficient device used for different types of applications. Its low gate charge and low on resistance characteristics make it suitable for switching and amplification applications. It is highly durable and reliable and exhibits high maximum voltage and current ratings, making it safe for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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