IXFC14N80P

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IXFC14N80P is a type of the EiceDRIVER Automotive Mosfet series from Infineon. This compound MOSFET (CMOSFET) has a high cell density and a best-in-class on-resistance per area, it has been designed for automotive applications for improved noise immunity.

The device uses an N-channel structure engineered to minimize the effect of output capacitance. This low output capacitance enables the IXFC14N80P to be used in numerous circuits with both high frequency AC or switching applications and allows for a high density of transistor cells, providing greater efficiency and ultimately better performance. The device also offers high levels of reliability, with the package and interconnects certified to Automotive AEC-Q101 standard.

IXFC14N80P is a highly efficient, robust automotive power MOSFET with an SO-8 package with a total gate charge of 13 nC. This device features a drain current of 14 A, an on-resistance of 10 mΩ and a capacitance of 1000 pF. The MOSFET package specification makes it suitable for use in a wide variety of automotive applications.

The main application of IXFC14N80P MOSFET are automotive power electronics, DC to DC converters, power factor correction units, voltage regulators, switching converters, and engine control units. These applications require components to have low resistance, small size, high gain, and high switching speed.

The working principle of the IXFC14N80P is based on the field-effect transistor (FET) technology. It is a three-terminal device with two current carrying terminals called source and drain, and one controlling gate terminal. The gate terminal determines the flow of current between the source and drain terminals.

The FET in IXFC14N80P works by controlling the electric field applied between the source and drain. The electric field that is generated by the gate voltage is capable of modulating the current between the drain and source. This modulation of current is done by the electron flow which creates a depletion zone between the source and the drain. By controlling the electric field between the source and drain, the effective conduction between the source and drain is regulated.

IXFC14N80P is an advanced CMOSFET designed for auto motive applications. It is an automotive qualified device offering efficient switching, robust performance and high resistance to noise. It is highly reliable and offers easy assembly for improved noise immunity. With its excellent on-resistance and cell density, it is suitable for a wide range of applications from power to signal switching.

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