Allicdata Part #: | IXFC13N50-ND |
Manufacturer Part#: |
IXFC13N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 12A ISOPLUS220 |
More Detail: | N-Channel 500V 12A (Tc) 140W (Tc) Through Hole ISO... |
DataSheet: | IXFC13N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFC13N50 is a member of the IXYS Corporation\'s family of high voltage, high speed MOSFETs. This device is specifically used in horizontal and vertical switching applications.
The IXFC13N50 is a high performance, high power MOSFET that is capable of being used in a variety of challenging environments. The IXFC13N50 contains an on resistance rating of 13.5Ω which makes it suitable for high power applications. Furthermore, the IXFC13N50 is a 40V device which offers a wide voltage range for applications.
The IXFC13N50 is designed for high-voltage applications, primarily due to its N-Channel MOSFET technology with EMI and surge suppression. This device is capable of being used in a variety of different applications such as: DC-DC converters, telecom/power grids and UPS/inverters.
The IXFC13N50 MOSFET provides an efficient and simple solution for high-voltage switching applications. It features very low on Resistance (RDS) and very low gate charge (Q g ) while maintaining a high peak current rating, high switching frequency and an integral body diode.
The IXFC13N50 is available with a number of different packages, making it suitable for different types of applications. Furthermore, this device fully complies with the RoHS directive, offering an environmentally friendly and safe product. The IXFC13N50 is also UL certified, making it an even safer option for demanding applications.
The working principle of the IXFC13N50 is that of a normal MOSFET. When the gate voltage is applied, a channel between the drain and source is created, allowing current to flow from the drain to the source. The voltage applied to the gate controls the resistance between the drain and source of the device.
The main advantages of this device come from its high switching speeds, low on resistance and high power handling capabilities. The IXFC13N50 is able to handle up to 300Amps of peak current, making it suitable for a variety of switching applications, especially those in which high speed, high voltage, and high power are all required.
In conclusion, the IXFC13N50 is an excellent option for high-voltage, high-speed applications. It offers a low on resistance and high power handling capabilities and is UL certified, making it a safe and reliable option. Furthermore, the IXFC13N50 is available in a variety of packages, making it suitable for different types of applications.
The specific data is subject to PDF, and the above content is for reference
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