IXFC16N80P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFC16N80P are advanced, incredibly useful FETs (field effect transistors) that are widely used in a variety of electronic devices. The IXFC16N80P is an IXFT Series 16 N-Channel Power MOSFET, featuring very low on-state resistance (RDS(on) = 0.58 Ohms) and an average gate charge of 16.4 nC. It features maximum drain-source breakdown voltage (BVDSS) of 16 V, a balanced maximum gate source voltage rating (VGS) of ±20 V, and a drain current (ID) of 10 A. It is fully RoHS compliant and can be used in a wide range of applications.

In terms of its application field, the IXFC16N80P can be used in applications involving power switch electronics, such as high-efficiency DC/DC converters and motor drives, as well as consumer applications, automotive and other power-consuming products. This FET is designed for applications that require low on-resistance/high current, low on-state losses, and low power parts. This MOSFET is designed for quick switching speeds and high-current carrying capacity.

To address the working principle of the IXFC16N80P, it\'s important to understand the physical characteristics of a MOSFET. The core principle of a FET, or field-effect transistor, is that it uses an electric field to control the flow of current between its source and drain. In specific terms, the IXFC16N80P relies on an electric field to create a channel between its source and drain, allowing it to conduct current. This is done by applying a voltage to the gate, which attracts electrons in the channel, decreasing its resistance, and allowing current to flow more freely through the device.

When the voltage on the gate is changed, the current between source and drain decreases until the channel closes completely, thus hindering the current. As such, the IXFC16N80P can be used for switching in circuits and also for amplifying signals. Furthermore, the use of an electric field also inherently provides isolation between the source and the gate, a feature highly sought-after in applications. This makes the IXFC16N80P a great choice for using power switching and signal amplification in applications such as computers, consumer electronics, automotive and telecommunication equipment.

In conclusion, the IXFC16N80P is a powerful, efficient and reliable N-Channel MOSFET. It features low on-state resistance, low on-state losses, quick switching speeds and a balanced maximum gate-source voltage rating. It finds multiple applications in various industries, such as power switch electronics, consumer electronics, automotive, and telecommunication. This MOSFET is an excellent choice for applications requiring low on-resistance/high current, low on-state losses, and low- power parts.

The specific data is subject to PDF, and the above content is for reference