IXFC96N15P

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The IXFC96N15P is a nanopower MOSFET developed by Infineon, one of the leading providers of power management solutions. It is a low-voltage (2.4V) N-Channel enhancement-mode power MOSFET with a maximum drain voltage of 15V, a channel diameter of 96 nm and a gate oxide thickness of 2nm. The IXFC96N15P is designed for low-power applications and is suitable for both portable and desktop applications.

The IXFC96N15P is suitable for a wide range of applications including motor control, LED lighting, power supplies, DC to DC converters and battery chargers. The device also has a very low leakage current, making it ideal for ultra-low-power applications.

The IXFC96N15P has three main components: the gate, the source and the drain. The gate-source voltage, also known as the "threshold voltage," is a voltage at which the transistor turns ON or OFF. It is typically in the range of 0.1 to 1.7V. When the gate-source voltage is below the threshold voltage, the transistor is considered OFF, and when the gate-source voltage is above the threshold voltage, it is considered ON.

The drain-to-source voltage is the voltage between the drain and the source. This voltage can range from zero to the maximum drain voltage specified in the data sheet. The drain current of the IXFC96N15P is limited to a maximum of 150mA, providing enough power for a wide range of applications.

The IXFC96N15P has a high ESD (electrostatic discharge) rating, making it suitable for applications which require high levels of noise suppression. The device also has a high electro-migration rating and a high capacity retention rating, which makes it suitable for high temperature and long-term reliability applications. The device can also be used in high-speed and high-current applications, thanks to its low gate-source capacitance and low reverse-transfer capacitance.

The IXFC96N15P utilizes an advanced Field-Plate technology which increases the speed and reliability of the device. The Field-Plate technology reduces the on-state resistance by providing a low-resistance path between the gate and source. This reduces the gate-source capacitance, making the IXFC96N15P suitable for high speed applications. The advanced Field-Plate technology also increases the reliability of the device by reducing the variation in the threshold voltage and increasing the ability to withstand electrostatic discharges.

The IXFC96N15P is a low-power MOSFET which is best suited for low-power applications. The device has a low gate-to-source capacitance and a low Drain-to-Source capacitance, making it suitable for high speed applications. The device also has a very low leakage current, making it ideal for ultra-low-power applications. The device utilizes an advanced Field-Plate technology which increases the speed and reliability of the device. The IXFC96N15P is a great choice for applications which require high levels of noise suppression, as it has a high ESD rating.

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