IXFC80N085

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The IXFC80N085 is a high voltage MOSFET with a maximum drain current of 8. 5A and a maximum drain voltage of 800V. It is a single N-Channel MOSFET (metal oxide semiconductor field-effect transistor). As a power MOSFET, it is commonly used in applications such as motor control, power supply, and power amplification.

To understand how the IXFC80N085 works, it’s important to understand the basics of a MOSFET. MOSFETs are made up of four layers of semiconductor material, two p-type layers and two n-type layers, with a channel formed between the two n-type layers. A MOSFET contains an insulated gate that is connected to one of the p-type layers and one of n-type layers . When the gate voltage is changed, it controls the current running through the channel, thus allowing for effective current control.

In the case of the IXFC80N085, the MOSFET has two terminals, the Drain and the Source. The Drain is the positive terminal and the Source is the negative terminal. The voltage applied to the drain is known as Vds, and is what dictates the maximum current that can be passed through the MOSFET. The voltage applied to the gate relative to the source is known as the gate-source voltage, or Vgs. This is what controls the current flow through the channel.

When the IXFC80N085 is operated, the gate voltage is raised from zero to the desired Vgs voltage. This causes holes to be created in the p-type layer, which allow electrons to flow from the n-type layer to the p-type layer, allowing current to flow through the MOSFET. As the gate-source voltage is increased, more holes are created, increasing the current flow. As the gate-source voltage is decreased, the holes are eliminated, decreasing the current flow.

In addition to motor control, power supply, and power amplification, the IXFC80N085 MOSFET can also be used in light dimmers, switching noise suppressing devices, and various amplifiers. It is a reliable, long-lasting MOSFET and is ideal for many applications.

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