IXFC36N50P Allicdata Electronics
Allicdata Part #:

IXFC36N50P-ND

Manufacturer Part#:

IXFC36N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 19A ISOPLUS220
More Detail: N-Channel 500V 19A (Tc) 156W (Tc) Through Hole ISO...
DataSheet: IXFC36N50P datasheetIXFC36N50P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: ISOPLUS220™
Supplier Device Package: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFC36N50P is a highly integrated power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed to be used in various power switching applications, emergency lighting, LED lighting, LED floodlights, LED tubes, fluorescent tubes, and halogen-powered lights. The IXFC36N50P is based on the ultra-fast trench technology, and has been optimized to provide reliable performance and low on-resistance in both switching and linear modes. It features a low profile package, low gate charge, and low thermal impedance.

The IXFC36N50P consists of three fundamental building blocks: the channel, the gate, and the source. The channel acts as a semiconductor wall that limits the flow of current through the device. The gate is the control element of the device, and it is responsible for turning the device on and off. The source is the part of the device that supplies the power needed for operation. By controlling the voltage on the gate, the current through the channel can be controlled.

The working principle of the IXFC36N50P is relatively simple. When a positive voltage is applied to the gate, the device will become “on”, allowing current to flow through the channel. The gate voltage can also be varied to change the amount of current that can flow through the channel, enabling power control of the device. When the gate voltage is switched off, the device will become “off” and the flow of current will cease.

The IXFC36N50P is well suited for portable devices, as it is extremely efficient and requires lower current input than many other power MOSFETs. It is also a popular choice for applications requiring variable speed control and synchronized dimming, and can handle up to 100W of power. The device’s fast switching characteristics make it an excellent choice for high-frequency applications such as automotive electronics, PLCs, and LED lighting dimmers.

The IXFC36N50P is a reliable, low-power MOSFET that provides reliable performance and low on-resistance in both switching and linear modes. It is ideal for applications that require variable speed control, synchronized dimming, and high-frequency switching. Its fast switching characteristics and low profile package make it well suited for mobile devices, automotive electronics, and LED lighting.

The specific data is subject to PDF, and the above content is for reference

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