Allicdata Part #: | IXFC74N20P-ND |
Manufacturer Part#: |
IXFC74N20P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 35A ISOPLUS220 |
More Detail: | N-Channel 200V 35A (Tc) 120W (Tc) Through Hole ISO... |
DataSheet: | IXFC74N20P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Series: | PolarHT™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 37A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFC74N20P is a high performance, high speed and high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is used in high-performance applications within the power and signal processing industry. This device features a low gate charge, a high current handling capability, and a variety of operating modes to maximize its performance and efficiency. It is also capable of operating in low-side, high-side, and reversible power and signal functions.
Advantages of using IXFC74N20P include the ability to operate at high speed, in extreme voltage and temperature conditions, with a nearly constant current flow. This enables designers to minimize the total power being consumed, and maximize the efficiency of their systems. The high efficiency ensures improved power performance and reliability.
The IXFC74N20P has a two-pin configuration which is suitable for most every application. Its gate is powerful enough to control a wide range of input voltages and its drain can be connected to both positive and negative (reverse) power sources. Its integrated transistor structure allows it to simultaneously drive two or more different bipolar junction transistors (BJTs). An integrated logic input pin provides an additional level of control over the current flow.
The IXFC74N20P offers high-speed switching characteristics along with high voltage and current handling capabilities. Its quick turn-on capabilities allow for low voltage start-up and fast switching speeds. The IXFC74N20P is capable of switching between maximum current levels of 1.4mA (low-side) and 17mA (high-side) respectively.
To ensure the best performance of the device in harsh environmental conditions, several features are incorporated in the IXFC74N20P to protect it from thermal runaway and overvoltage conditions. The device includes an integrated temperature sensing feature, allowing it to detect when the temperature is too high and automatically reduce the power consumption. Additionally, the IXFC74N20P is designed with overvoltage protection circuitry that will shut down the device in the event of an overloaded circuit.
The IXFC74N20P has been designed with the ability to operate in either a low-side or high-side configuration, thereby providing designers with the flexibility to optimize their power and signal performance. The device\'s ability to operate at higher speed than most other MOSFETs also makes it ideal for applications requiring a quick response. In addition to its fast switching speed, it offers excellent heat dissipation as well as a low forward voltage drop.
In summary, the IXFC74N20P is an excellent choice for applications where high performance, efficiency, and reliability are desired. Its excellent switching characteristics and wide operating range make the IXFC74N20P an ideal choice for high-voltage, high-speed applications in the power and signal processing industry.
The specific data is subject to PDF, and the above content is for reference
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