IXFC14N60P

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IXFC14N60P Application Field and Working Principle

This article focuses on IXFC14N60P, an innovative field effect transistor (FET) from IXYS Corporation. Specifically, this article will detail the application field and working principle of IXFC14N60P. The IXFC14N60P is a power MOSFET which is ideal for use in automotive applications, mobile autonomous vehicles and renewable energy systems due to its advanced protection features and low switching and conduction losses.

Description of IXFC14N60P

IXFC14N60P is a N-channel enhancement-mode power MOSFET and is optimized for use in automotive and other applications with advanced levels of protection. IXFC14N60P has a high current-carrying capacity and offers low on-resistance and low gate charge. It is designed to handle a current rating of up to 14A, with a breakdown voltage of 600V and gain at 10V of 1.7 mOhm. This product is capable of efficiently delivering power through its low operation and conduction losses. Furthermore, IXFC14N60P features a uniformity of transistor characteristics within a “Die”, which is ideal for paralleling multiple devices.

IXFC14N60P Applications

IXFC14N60P can be used in a variety of automotive and general power switching applications. Some of these applications include cold-start power supply, DC motor control, intelligent power modules, high-performance switching power supplies, automotive power applications, and renewable energy systems. This device is also suitable for body computers and various automation systems, such as solar panel inverters and DC-AC inverters.

Working Principle of IXFC14N60P

The IXFC14N60P is a N-channel enhancement-mode MOSFET that works on the principle of a thermionic valve. This device has three terminals, namely the Drain (D), Source (S) and Gate (G). When the power supply potential applied to the Source is greater than that applied to the Drain and Gate, then, by increasing the Gate potential, an electric field will be created and the MOSFET will be “ON” and current will flow from the Source to the Drain. The IXFC14N60P also has a threshold voltage, known as the VGSTh, and when the gate voltage is greater than the VGSTh, the current starts to flow.

The gate voltage affects the current flow and the resistance of the IXFC14N60P. When the gate voltage is increased, the current flow and drain-source resistance is also increased. When the gate voltage is decreased, the current flow is reduced and the drain-source resistance is also decreased. In conclusion, IXFC14N60P is a versatile field effect transistor that offers low on-resistance and low switching and conduction losses.

Conclusion

The IXFC14N60P from IXYS Corporation is an N-channel enhancement-mode power MOSFET which is ideally suited for a variety of automotive and general power switching applications. This device features a high current-carrying capacity and low on-resistance and low gate charge. Moreover, it offers low switching and conduction losses and a uniformity of transistor characteristics within a “Die”. The IXFC14N60P works on the principle of a thermionic valve, wherein the gate voltage affects the current flow and drain-source resistance of the device.

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