IXFC20N80P

IXFC20N80P is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) of the 30V, high-speed, super-junction type. This type of MOSFET is designed for use as a high-speed switching power switching in switch mode power supplies, motor drives and other electronic systems.

Application Field

IXFC20N80P is a super-junction MOSFET with a very low Rds(on) compared to standard MOSFETs, making it ideal for use as a high-frequency switch in switch mode power supplies and other high-speed applications. It is also suitable for use in motor drives, automotive and avionics applications, as it can turn on or off quickly and precisely with very low power loss.

Another major application for IXFC20N80P is the use in high-temperature (>150°C) switching applications. This type of MOSFET can be used in either a linear or switching configuration due to its very low Rds(on) and high breakdown voltage capability.

Furthermore, IXFC20N80P is also suitable for use in high voltage applications, as its high breakdown voltage ensures reliable operation at high voltages up to 600V.

Working Principle

IXFC20N80P is an N-channel MOSFET and works on the basis of the Field Effect principle. It consists of a semiconductor substrate with source and drain electrodes on it and a gate electrode above it. When a positive voltage is applied to the gate electrode, it creates an electric field between the gate and substrate, creating a channel between the source and drain electrodes. By varying the voltage applied to the gate, the size of the channel can be changed, thereby controlling the current flow through it.

N-channel MOSFETs can also operate in the linear region, which means that they can be used as electronic amplifiers or voltage regulators. In this mode, the voltage applied to the gate will determine the amount of current flowing through the channel, and the amount of current is determined by the gain of the MOSFET. This can be controlled by varying the voltage applied to the gate, thereby controlling the output current.

IXFC20N80P is capable of operating at high speed, as it has a very low Rds(on) (resistance between the source and drain electrodes when the MOSFET is on). This ensures that it can be switched on and off quickly, making it ideal for use in high-speed applications.

Finally, IXFC20N80P is capable of handling high temperatures up to 150°C (>300°F). This makes it suitable for use in high-temperature applications, as the MOSFET can still operate reliably at these temperatures.

Conclusion

In conclusion, IXFC20N80P is an N-channel MOSFET designed for use in switch mode power supplies and other high-speed switching applications. Its low Rds(on) ensures that it can be switched on and off quickly, while its high breakdown voltage and high temperature tolerance make it suitable for use in high-voltage and high-temperature applications. Finally, it can also be used as an electronic amplifier or voltage regulator, as its gain can be controlled by varying the voltage applied to the gate.