| Allicdata Part #: | IXFC60N20-ND |
| Manufacturer Part#: |
IXFC60N20 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 60A ISOPLUS220 |
| More Detail: | N-Channel 200V 60A (Tc) 230W (Tc) Through Hole ISO... |
| DataSheet: |  IXFC60N20 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | ISOPLUS220™ |
| Supplier Device Package: | ISOPLUS220™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 230W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXFC60N20 is a power module manufactured by Infineon Technologies. It is a type of Field-Effect Transistor (FET) that falls into the category of Single-MOSFETs. The main feature of this component is its very low on-state resistance of 60mΩ (at 10V gate-source voltage, 25°C). This makes it suitable for use in high-power applications where low on-state resistance is essential.
The IXFC60N20 MOSFET uses a vertical double-diffused N-channel MOSFET structure to produce a low on-resistance. This type of structure allows for a higher level of current density compared to other FETs. In addition, the IXFC60N20 also features an integrated ultra-low gate-charge Qg, which helps to further reduce switching losses.
The IXFC60N20 is an ideal component for use in power applications, including high-current switch mode power supplies, motor speed control, power converter applications, and low-voltage switching regulators. It can also be used for high-frequency circuit protection and DC/DC converter applications where a low on-state resistance is desired.
The working principle of the IXFC60N20 is based on three main components – the gate, the body, and the drain. The gate is the control terminal, and by varying the voltage applied to it, the resistance between the source and drain terminals can be varied. The body terminal is connected to the source terminal, and it is used to control the voltage applied to the gate. The drain terminal is connected to the load, and it is used to dissipate the current flowing through the device. When the gate-source voltage is increased, the on-state resistance of the device decreases, allowing more current to flow through.
In conclusion, the IXFC60N20 is a FET suitable for applications requiring high power and low on-state resistance. It is most commonly used in high-power switch mode power supplies, motor speed control, power converters and low-voltage switching regulators. Furthermore, the low gate-charge also helps reduce switching losses. Therefore, it is an ideal choice for high-frequency circuit protection and DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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