IXFC80N10

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The IXFC80N10 is a power MOSFET that has been designed for use in a variety of automotive applications. It is designed for both linear and switching applications, and offers high performance, reliability and low on-resistance. The IXFC80N10 is manufactured with the latest silicon process technology and advanced packaging techniques, and is available in 4 different versions: IXFC80N9, IXFC82N10, IXFC84N10 and IXFC86N10.

To understand the application field and working principle of the IXFC80N10, it is important to understand what a metal oxide semiconductor field-effect transistor is. A metal oxide semiconductor field-effect transistor (MOSFET) is one of the most commonly used transistors due to its low on-state resistance, low power dissipation, low input capacitance, ruggedness, and ease of fabrication. MOSFETs are used in most logic circuits, power electronics, and power supplies.

The IXFC80N10 is a single N-Channel Enhancement Mode MOSFET. It is a low power device with a maximum drain-source voltage (VDS) of up to 20V, and a maximum current rating of up to 80A. The typical drain-source on-resistance (RDS(ON)) is 4.6mΩ at VGS=10V and 14mΩ at VGS=4.5V. The IXFC80N10 features a high avalanche energy rating and a very fast turn-on time. It is rated for an operating temperature range of -55 to +175C.

The IXFC80N10 is application specific, and is designed for a variety of automotive applications, such as load switching, gate drive, audio, and DC/DC conversion. It is also ideal for general load switching and power management applications.

The IXFC80N10 can be used as a switch or amplifier in various circuit configurations. The device is designed to function either as an open-drain or closed-drain device depending on the operating voltage. When used as an open-drain or closed-drain device, the IXFC80N10 will charge and discharge its gate capacitance in response to its control voltage, thereby allowing it to control the gate voltage. As the gate voltage is increased, the IXFC80N10 will pass more current and the drain-source on-resistance (RDS(ON)) will decrease. Conversely, as the gate voltage is decreased, the IXFC80N10 will pass less current and the RDS(ON) will increase.

The IXFC80N10 also features a low gate threshold voltage (Vth) of 4.0V. This means that the IXFC80N10 can be activated with less gate current than other MOSFETs. This feature is ideal for power management applications where energy efficiency is important. It also allows the IXFC80N10 to be used in a variety of voltage ranges, making it suitable for various power supply applications. Additionally, the IXFC80N10 has a low drain-source capacitance (CDS) of 100pF, allowing it to switch quickly and reliably.

In summary, the IXFC80N10 is a single N-Channel Enhancement Mode MOSFET that is specifically designed for use in a variety of automotive applications. It features a low on-resistance and a high avalanche energy rating, as well as a low gate threshold voltage and drain-source capacitance. This makes the IXFC80N10 ideal for use in load switching, gate drive, audio, and DC/DC conversion applications.

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