Allicdata Part #: | IXFC24N50-ND |
Manufacturer Part#: |
IXFC24N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 21A ISOPLUS220 |
More Detail: | N-Channel 500V 21A (Tc) 230W (Tc) Through Hole ISO... |
DataSheet: | IXFC24N50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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In the world of electronics, there are numerous components that work together to bring us everything our technology has to offer. One such component is the IXFC24N50, which stands for Insulated Lateral Field Exchanged MOSFET. The IXFC24N50 belongs to a family of components known as single-gate field-effect transistors, or FETs, which are commonly used for applications requiring high performance and low power dissipation. In this article, we will discuss the application field and working principle of the IXFC24N50.
Application Field of IXFC24N50
The IXFC24N50 is primarily used in applications requiring low power dissipation and high frequency switching. It is a very useful component in audio and video applications. The IXFC24N50 can be used in applications such as audio amplifiers, TV tuners, surround sound systems, and any other application that requires low power dissipation and high frequency switching. Additionally, the IXFC24N50 is also used in power supplies that are required to be powered digitally, such as the switching voltage regulators for desktop computers, servers, and laptop computers.
Working Principle of IXFC24N50
The IXFC24N50 is a single-gate FET, which stands for Field Effect Transistor. FETs are components that operate based on the principle of a three-terminal device, where one of the terminals is the gate terminal, the other two being the source and the drain. A voltage difference between the source and the drain causes a current to flow through the device and this current is controlled by the voltage applied to the gate terminal. This voltage causes an electric field to form in the transistor and this field modulates the current flow between the source and the drain.
In the case of the IXFC24N50, the field is generated by the insertion of an insulation barrier between the source and the drain, and this material is known as insulation lateral field exchanged (ILFET) material. This barrier allows the electric field to be more precisely controlled, enabling the IXFC24N50 to switch faster and more accurately than other traditional FETs. This makes the IXFC24N50 ideal for high frequency applications such as amplifiers and TV tuners.
Conclusion
The IXFC24N50 is a single-gate field effect transistor (FET) commonly used in applications that require low power dissipation and high frequency switching. It is a very useful component in audio and video applications as well as power supplies that are required to be powered digitally. The IXFC24N50 operates based on the principle of an ILFET, where an insulation barrier is inserted between the source and the drain to cause a precise electric field that modulates the current flow between the source and the drain. This makes the IXFC24N50 ideal for high frequency applications such as amplifiers and TV tuners.
The specific data is subject to PDF, and the above content is for reference
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