IXFK140N20P

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The IXFK140N20P is a high-temperature, 200-volt, N-channel power metal–oxide-semiconductor field-effect transistor (MOSFET). It is a type of semiconductor device used for switching, amplifying, and other purposes in electronics. It is part of the IXF series manufactured by IXYS Corporation.

Application Field

The IXFK140N20P is used mainly in switching and lighting applications. It can be used in a variety of operations such as door lockings and window operations, automotive and electrical disablement, or the advanced working principle of power management. The device has a high power density and a low on-resistance, which makes it an ideal choice for high-voltage applications.

Working Principle

When no voltage is applied to the Gate, the IXFK140N20P will be in the "OFF" state with all current paths blocked. When the Gate voltage is increased to the threshold voltage, the device will switch the electric current on and off. This switching action is achieved when the Gate voltage reaches the Turning On Point (Vth).

The IXFK140N20P features a low threshold voltage (Vth) and high Drain-Source Breakdown Voltage (BVds). The high BVds ensures that the device can withstand the high voltages associated with many applications. The low on-resistance Rds(on) guarantees low power dissipation and high power efficiency with minimal power loss in the operation of the device.

The IXFK140N20P also features a low gate-source capacitance. The lower gate-source capacitance in the IXFK140N20P helps reduce the likelihood of latching currents and cross-conduction that can occur in high-power applications.

The IXFK140N20P is a robust and reliable device in a variety of applications. It can handle high temperature up to 175°C junction and provides excellent switching performance with low on-state resistance and low gate charge. The device offers a wide range of options for selecting gate sources, drain sources, and Gate Stops.

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