IXFK21N100Q Allicdata Electronics
Allicdata Part #:

IXFK21N100Q-ND

Manufacturer Part#:

IXFK21N100Q

Price: $ 14.55
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 21A TO-264
More Detail: N-Channel 1000V 21A (Tc) 500W (Tc) Through Hole TO...
DataSheet: IXFK21N100Q datasheetIXFK21N100Q Datasheet/PDF
Quantity: 1000
25 +: $ 13.22900
Stock 1000Can Ship Immediately
$ 14.55
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK21N100Q is a part of IXYS Integrated Circuits Division\'s series of ultra low on-resistance, low voltage level MOSFETs. This device is a high voltage, power metal oxide semiconductor field-effect transistor (MOSFET) with a built-in diode. It has a low on-resistance, low voltage start up, minimal gate charge, ultra low input capacitance, and a wide gate drive range. With its high blocking voltage and high surge current capability, the IXFK21N100Q has been designed to be used in a variety high power switching applications.

The IXFK21N100Q has been designed for use in various types of high voltage applications such as motor drives, power switching, lighting control, precision power circuit design and power cycles. It is also widely used in many different types of industrial, commercial and consumer electronics. Some of the most common applications that the IXFK21N100Q is used for include inverters, AC adapters, HVAC systems, solar power systems, gate drivers, and automotive power switching.

The IXFK21N100Q device works by using its built-in diode to conduct on and off operations. This device has a low on-resistance, allowing it to efficiently switch high currents. It has a low input capacitance, which is ideal for low frequency switching applications. It also has a wide gate drive range and minimal gate charge, allowing it to easily be driven from a variety of different sources. This device also has a high blocking voltage, which means that it can support high voltage applications.

In addition to its solid state electrical components, the IXFK21N100Q also has robust mechanical features designed to ensure reliable performance. These features include a low thermal resistance package with an encapsulated body that helps to dissipate heat quickly and effectively. The integrated device also has a wide operating temperature range that allows for reliable performance over an extended period of time. Additionally, this device also has a wide range of gate charge values, allowing it to be used in a wider variety of applications.

In conclusion, the IXFK21N100Q is a powerful, efficient and reliable integrated device designed for high power switching applications. This device has a low input capacitance, a low on-resistance and a high voltage blocking capability that make it ideal for various types of applications. It also has a wide gate drive range and a low thermal resistance package that ensures reliable and efficient operation. Thanks to its various features, this device has become a popular choice for many different types of industrial, commercial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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