IXFK400N15X3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFK400N15X3 is a single N-channel power MOSFET developed by Infineon, that use to switch, amplify, and control high power and current. The IXFK 400N15X3 is designed using an advanced Site VHF technology, which provides great linear features, low on-state resistance, high-speed switching, low gate charge and high avalanche voltage. The applications of this MOSFET is mainly provided in various applications, including various smart systems, lighting control systems, motor control, power supply units.

The MOSFET is a semiconductor that acts as a switch for high current and voltage applications. It is a 3-terminal device, with its two terminals, the source and drain, connected to the N-type and P-type semiconductor materials respectively, and the third terminal is the gate. When the voltage is applied to the gate, the electric charge attracts electrons from the N-type semiconductor material and holes from the P-type material. This creates a current flow between the two semiconductor materials and thus a conductive channel is created.

When this channel is created, it is called an enhancement-mode MOSFET. This means that the threshold voltage (VGSth) is positive, so the MOSFET is an ‘on’ when the voltage applied to the gate is greater than the threshold voltage. When the voltage is lower than this, the MOSFET will be ‘off’. This makes the MOSFET very useful for controlling current in power switching devices.

The IXFK 400N15X3 is a N-channel MOSFET, which has an input impedance of 20nA. It has a drain-source voltage of 400V, and a drain current of 15A, at an on-state resistance of only 150mΩ. This makes it ideal for applications that require a fast and efficient current switching, such as lighting control systems, power supplies, and smart systems. It also has a high thermal stability, and a maximum temperature of operating 175°C.

The IXFK 400N15X3 is designed to protect against electrostatic and other over-voltage conditions. Its integrated electrostatic discharge protection diode (ESDP) reduces the risk of failure when exposed to sudden high voltages. Its gate isolation features also provide outstanding protection against gate-induced dielectric break down (GIDL). This ensures reliable electrical operation when exposed to high voltages and transient conditions.

The IXFK 400N15X3 is also equipped with an integrated parasitic bipolar transistor (BPTR), which helps reduce the threshold voltage across the MOSFET, resulting in a lower gate drive and increased efficiency. The MOSFET also has a fast switching speed and a low input capacitance, which helps reduce the MOSFET’s power consumption. This in turn helps to reduce energy consumption, improve system efficiency, and ensure reliable operation in various applications.

In conclusion, the IXFK 400N15X3 is a powerful, efficient, and reliable single N-channel power MOSFET that is designed to switch, amplify, and control high power and current. It is an ideal choice for various applications such as lighting control systems, motor control, power supply units, and smart systems. With its low threshold voltage, fast switching speed, and low input capacitance, it provides efficient, reliable protection and performance. In addition, its integrated electrostatic discharge protection diode and gate isolation features add to its reliability and efficiency.

The specific data is subject to PDF, and the above content is for reference