IXFK50N85X

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The IXFK50N85X is a N-channel enhancement-mode power field effect transistor (FET) that has been designed to handle large currents and voltages. It is suitable for off-line switching and stepper motor controls, and is also ideal for use in automotive, telecom and industrial applications. As with most FETs, the IXFK50N85X utilises the field-effect mechanism to control current flow through the device. This is done by the manipulation of a thin conducting channel that is placed between the source and drain of the device. This thin conducting channel is only present when the gate voltage of the device is positive relative to the source, and this creates a "pinch-off" effect, which limits the current flow through the channel.

The IXFK50N85X is a rugged power FET and is capable of delivering a continuous drain current of 50A at temperatures up to 125°C, and has an avalanche energy of 8.5mJ. The device also has an on-resistance of 18 mΩ and a breakdown voltage of 210V. The IXFK50N85X is a high-voltage power FET that provides excellent switching performance with low gate drive requirements. The device is also able to handle high-drain-source voltages, which makes it ideal for motor control applications such as DC motors, and off-line car chargers.

The IXFK50N85X operates on a simple working principle. When the gate voltage is at zero volts relative to the source, the FET is in its "off-state" and there is no current flowing through the device. However, when the gate voltage is increased, the field-effect mechanism is activated and this "pinches-off" the conducting channel, allowing current to flow through the device. The device will remain in its "on-state" until the gate voltage is reduced to zero volts.

The IXFK50N85X is a reliable and versatile FET that can be used in a wide range of applications. Its high on-resistance and low switching losses make it suitable for low-power switching applications such as solid-state relays and dimmers. Additionally, its high-energy avalanche capability makes it ideal for motor control applications, allowing it to withstand high-drain voltages without the risk of destruction or the need for an external heatsink. The IXFK50N85X is also used in off-line car chargers and telecom applications, where its robust design and high current capability make it an ideal choice.

In conclusion, the IXFK50N85X is a robust N-channel enhancement-mode power field effect transistor that offers a range of features for use in a variety of applications. It is capable of delivering a continuous drain current of up to 50A, has an avalanche energy of 8.5mJ and a breakdown voltage of 210V. The device operates on the principle of field-effect manipulation and by controlling the gate voltage, the current flow through the device can be regulated. The IXFK50N85X is suitable for off-line switching and motor control applications due to its low drive requirements and high energy capability. It is also suitable for use in telecom and industrial applications and can be used to reliably switch low-power devices.

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