IXFK140N30P Allicdata Electronics
Allicdata Part #:

IXFK140N30P-ND

Manufacturer Part#:

IXFK140N30P

Price: $ 12.83
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 140A TO-264
More Detail: N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole T...
DataSheet: IXFK140N30P datasheetIXFK140N30P Datasheet/PDF
Quantity: 575
1 +: $ 12.83000
10 +: $ 12.44510
100 +: $ 12.18850
1000 +: $ 11.93190
10000 +: $ 11.54700
Stock 575Can Ship Immediately
$ 12.83
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK140N30P is an insulated-gate field effect transistor (IGFET) from International Rectifier. Introduced in 2009, these devices are designed for use in various power control applications as well as in various power input and output stages of switching power supplies. This IGFET covers a wide swath of small and medium power control applications, including motor controllers, power converters, power transducers and similar devices.

Based on N-channel MOSFET technology, the IXFK140N30P utilizes a high-performance structure in order to address the demands of today\'s high-power performance applications. The gate structure is double-oxide, which is capable of providing excellent thermal stability and low gate capacitance. In addition, the gate structure features drain source and series-connected polarity protection.

The IXFK140N30P is offered in a P QFN package, with a 9x9mm body and a 0.4mm pitch. Due to the small package size and low total gate charge, it is suitable for use in a variety of high-power applications such as power transducers, power converters and motor controllers. It is also suitable for use in battery-operated applications due to its low-power consumption.

In terms of performance, the IXFK140N30P offers a maximum drain current rating of 30A, which is suitable for most applications. In addition, it has a maximum drain-source voltage rating of 500V, which can support up to twice the voltage of most conventional MOSFETs. Other features include excellent power capability under high temperature, as well as excellent safe operating region characteristics.

When it comes to the operation of the IXFK140N30P, analog devices typically have a fixed gate voltage, which is determined by an internal charge pump. This charge pump is normally controlled via an external pin. When the external pin is driven low, the internal charge pump will pump the gate voltage up to the desired voltage level. When the pin is driven high, the internal charge pump will then pump the gate voltage down to the desired level.

In terms of applications, the IXFK140N30P is typically used in a variety of battery-operated applications, due to its low power consumption and excellent safe operating region characteristics. It is also suitable for use in high-power applications such as power transducers, power converters and motor controllers. In these applications, the IXFK140N30P can provide excellent performance under high temperature and increased power characteristics.

The specific data is subject to PDF, and the above content is for reference

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