IXFK180N085 Allicdata Electronics
Allicdata Part #:

IXFK180N085-ND

Manufacturer Part#:

IXFK180N085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 85V 180A TO-264AA
More Detail: N-Channel 85V 180A (Tc) 560W (Tc) Through Hole TO-...
DataSheet: IXFK180N085 datasheetIXFK180N085 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 85V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXFK180N085 is a single, N-Channel MOSFET with a maximum drain source voltage of 180V and a continuous drain current of 85A. It boasts low on-resistance, low input capacitance and fast switching speed, making it suitable for a range of applications.

The mode of operation of IXFK180N085 is based on the MOSFET channel-resistivity control principle. MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a voltage controlled device that is used in many electronics applications. Its operation is based on the principle of creating an electric field between the source and the drain, which can then be varied with changes in voltage. In the case of an N-Channel MOSFET, the field is created by a flow of electrons, allowing current to flow through the transistor when the gate voltage is applied.

The IXFK180N085 is a power MOSFET, suitable for a wide range of applications. Due to its excellent electrical characteristics, it can be used in power management and control circuits, as well as high frequency applications. It is also suited for applications where high switching speed is needed, such as automotive, telecommunications and industrial motor control. Other applications include motor and solenoid drivers, d.c. to d.c. converters and lamp ballast circuits.

The main features of IXFK180N085 include a maximum drain source voltage of 180V, a continuous drain current of 85A and an RDS (ON) of 36mΩ. It also has a maximum input capacitance of 690pF and a maximum gate charge of 116 nC. The device can operate at a maximum junction temperature of 150℃, and is protected against reverse voltage protection.

The IXFK180N085 is a versatile MOSFET transistor with many useful features. It is suitable for a wide range of applications, including power management and control circuits, automotive and telecommunications, industrial motor control, and d.c. to d.c. converters. It boasts an excellent RDS (ON) and maximum input capacitance, as well as a high maximum junction temperature. Its low drain source voltage and continuous drain current also make it suitable for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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