IXFK24N90Q Allicdata Electronics
Allicdata Part #:

IXFK24N90Q-ND

Manufacturer Part#:

IXFK24N90Q

Price: $ 14.62
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 900V 24A TO-264
More Detail: N-Channel 900V 24A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFK24N90Q datasheetIXFK24N90Q Datasheet/PDF
Quantity: 1000
25 +: $ 13.29600
Stock 1000Can Ship Immediately
$ 14.62
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK24N90Q is a Field Effect Transistor (FET) designed for High-Frequency and Low-Noise Amplification. It is an N-Channel Power MOSFET commonly used in audio amplifiers and radio systems that require reliable and efficient operation. An IXFK24N90Q transistor provides high input impedance, which reduces noise and power dissipation, making it ideal for audio applications. Additionally, its size and weight are relatively low compared to other FETs, making the IXFK24N90Q an attractive option in many radio systems.

IXFK24N90Q is an enhancement type of power MOSFET. It is composed of a source, a drain, a gate terminal and a substrate. The source typically serves as the input for electrons. The drain provides the output for electrons and is usually connected to a power supply. The gate terminal is the control terminal, which can be used to either allow or reject current from the source to the drain. When the gate voltage is low, electrons cannot flow from the source to the drain, and the device is turned off. When the gate voltage is high enough, electrons can travel from the source to the drain, and the device is turned on. By controlling the gate voltage, a current can be passed through to the drain and the drain can be supplied with power.

The IXFK24N90Q detector is mainly used in applications that require reliable, high-speed and low-noise performance. This FET can be applied in audio amplifiers, drones, 3-D printers, radio systems, automotive electronics, and Robotics applications. It can provide a high-frequency, low-noise bandwidth of up to 300MHz, making it an ideal choice for radio systems. Additionally, it is highly reliable and efficient due to its low on-resistance and low input capacitance. The IXFK24N90Q is also suitable for power amplifier designs, as it can handle high power and has low ON-resistance.

In conclusion, the IXFK24N90Q is a N-Channel power MOSFET designed for audio, robotics and radio systems applications. It is highly reliable, efficient and suitable for high-frequency and low-noise operations. Its size and weight are relatively low and the device is highly preferred when high-performance, efficiency and reliability is required.

The specific data is subject to PDF, and the above content is for reference

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