Allicdata Part #: | IXFK20N120P-ND |
Manufacturer Part#: |
IXFK20N120P |
Price: | $ 14.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 20A TO-264 |
More Detail: | N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole TO... |
DataSheet: | IXFK20N120P Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 12.81340 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 193nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 570 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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, !An IXFK20N120P transistor is a type of power MOSFET, ideal for applications of high frequency switching and linear voltage regulation. It is classed as a single P-channel enhancement mode MOSFET because it is an enhancement type field effect transistor (FET). The device is a 20 amp, 1200 volt rated transistor, making it ideal for high voltage applications.
MOSFETs are a type of transistor, consisting of four terminals, a source, a drain, a gate and a body, of which the gate is electrically isolated from the source and drain. The main difference between MOSFETs and BJTs is that MOSFETs are voltage controlled devices, meaning that applying a voltage to the gate will change the device\'s operation, whereas a BJT is current controlled, in that an increase or decrease in current will cause a change in the device\'s operation.
The working principle of IXFK20N120P is as follows. Applying a voltage at the gate will cause a change in conductivity between the source and the drain. The gate voltage causes a field to be created which causes an electric field across the channel. This in turn causes a change in the conductivity of the channel which controls the current between the source and the drain.
The IXFK20N120P is an ideal solution for higher frequency switching and PWM modulation, due to its low power losses, low gate charge and low on-state resistance. It is also more reliable than BJTs because it experiences no thermal runaway, meaning that it can be used in high reliability and high temperature applications, such as electric vehicles and power supplies.
IXFK20N120P has a wide variety of application fields, such as switching high frequency, DC-DC converters, load switching and battery current limitation, along with power control, motor driver and rectifier applications. It is also useful for automotive applications, such as Reverse Battery Protection, Inverter/Charger Precharge, Auxiliary Systems, and Overload Protection.
In summary, IXFK20N120P is a type of single P-channel MOSFET ideal for high frequency switching, linear voltage regulation and high reliability applications. It works by using a gate voltage which causes the creation of an electric field across the channel, which controls the current between the source and the drain. As a result, IXFK20N120P is ideal for power control and motor driver applications, as well as automotive applications, such as reverse battery protection, inverter/charger precharge, auxiliary systems and overload protection.
The specific data is subject to PDF, and the above content is for reference
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