IXFK72N20 Allicdata Electronics
Allicdata Part #:

IXFK72N20-ND

Manufacturer Part#:

IXFK72N20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 72A TO264AA
More Detail: N-Channel 200V 72A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXFK72N20 datasheetIXFK72N20 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFK72N20 is a high-speed, high-voltage, low-on-state resistance MOSFET, made with planar DMOS technology and intended for general purpose switching applications. It is a Power MOSFET device specifically designed for use in high-power switching applications such as power supplies, DC-DC converters and motor control circuits. This device has a drain-source on-state resistance of 0.004 ohm, making it ideal for power switching applications requiring low on-state resistance.

The IXFK72N20 has a wide VDS range of -2 to -72V and a maximum RDS (on) of 0.0024 Ohm and peak current of up to 10 A, making it suitable for applications in the automotive and industrial markets. This device also features an intrinsic fast body diode, allowing it to be used in applications such as rectification, synchronous rectification and low-side switching.

The IXFK72N20 MOSFET is a n-channel enhancement mode device. It is a voltage-controlled device that uses the gate voltage to control the conductivity of the channel between the drain and the source pins. When the gate voltage is low (<2V), the channel is “off” and the device is non-conducting. When the gate voltage rises above a threshold voltage, the channel is “turned on” and the MOSFET passes current. The MOSFET is designed to be used in either an enhancement or a depletion mode. In the enhancement mode, the channel is turned on by increasing the gate voltage, and in the depletion mode, the channel is turned on by decreasing the gate voltage.

The working principle of the IXFK72N20 MOSFET is relatively simple. It consists of a source and a drain, as well as a control gate that can either allow or resist current flow between the two terminals. By adjusting the voltage at the gate (the control terminal), it can be used to either switch the MOSFET on or off. When the gate voltage is low, the MOSFET is in the off state, meaning that no current can pass through the device. When the gate voltage is raised above a certain threshold, the MOSFET enters the on state, allowing current to pass through.

The most common application of the IXFK72N20 MOSFET is in power switching applications such as power supplies, DC-DC converters and motor control circuits. This device is typically used as a low voltage, high current and high speed switch in power switching applications. It is also suitable for use in low-level signal switching and digital logic components. Due to its low on-state resistance, it is especially suitable for power switching applications requiring low voltage drops, such as in high-performance motor control circuits. The IXFK72N20 is also well-suited for protection against overcurrent and overvoltage in mobile devices.

In summary, the IXFK72N20 is a high-speed, high-voltage, low-on-state resistance MOSFET, especially suitable for power switching applications such as power supplies, DC-DC converters, motor control circuits and protection against overcurrent and overvoltage. Its low-level signal switching and digital logic applications make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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