IXFK64N60Q3

The IXFK64N60Q3 is a single field-effect transistor (FET) with an isolation metal oxide semiconductor (MOS) configuration in an N-channel logic level silicon device. The structure of these types of FETs is built around a metal-oxide-semiconductor (MOS) gate, which is capable of controlling the flow of electrons from the source to the drain during the on-state. The metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most widely used devices in modern electronics, as it is capable of achieving a high degree of gain within a relatively small area on a circuit board. The IXFK64N60Q3 is designed to be used in applications requiring high voltage operation, as it has a high drain breakdown voltage (VGS) of 16 volts and a maximum of 61 volts for its gate threshold voltage (Vt).

The IXFK64N60Q3 has a maximum continuous drain current of 60 Amps at 25C and a maximum negligible drain current (IDSS) of 8 Amps. Its RDS(on) or drain-source on-resistance is a maximum of 62m-ohm. These FETs can also be used in pulse mode applications as they have a fast switching speed of 25ns. The IXFK64N60Q3 can be used in a wide range of applications requiring N-channel operation, such as motor controls, power supplies, overload protection, and switching applications. In addition, the IXFK64N60Q3 is well suited for automotive applications due to its low gate charge, and high dV/dt and dI/dt ratings.

The IXFK64N60Q3 is an electrostatically sensitive device and should be handled with care when handling or mounting. It is important to check the state of the drain and gate voltages prior to use, and a gate snubber may be used in order to protect the gate from transient overvoltage when switching inductive loads. In order to ensure a long lifespan of the device, it is best to air-gap the FET from other components on the board, as well as having it cooled with an airflow.

The working principle of the IXFK64N60Q3 is relatively simple. When the gate voltage is decreased from its threshold voltage, the drain current flow is increased. This increase in current occurs due to an increase in the capacitance between the gate and the drain, which in turn reduces the on-resistance of the drain-source channel. As the drain current increases, the drain voltage decreases, which in turn reduces the gate voltage, thus limiting the drain current.

In conclusion, the IXFK64N60Q3 is a single field-effect transistor (FET) with an isolation MOS configuration in an N-channel logic level silicon device. It is suitable for applications requiring high voltage operation, such as motor controls, power supplies, overload protection, and switching applications. Its RDS(on) is low, and it is capable of switching at high speeds. The working principle of the IXFK64N60Q3 is relatively simple, where an increase in the gate voltage decreases the drain current flow and a decrease in the gate voltage increases the drain current flow.