IXFK260N17T

Vgs(th) (Max) @ Id:	5V @ 8mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264AA (IXFK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1670W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	24000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	400nC @ 10V
Series:	GigaMOS™
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	260A (Tc)
Drain to Source Voltage (Vdss):	170V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IXFK260N17T Application Field and Working Principle

The IXFK260N17T is a high-performance, low on-resistance, N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single type device which is an ideal choice for high current, low voltage DC and AC switching applications. This MOSFET is an important part of power electronics devices used in various industries. From cellular phone and notebook applications to LED lighting and solar energy systems, it has become a key component in the power management of many circuits.The IXFK260N17T is a high-last IGBT with an advantage of fast switching speed. It has a very low on-resistance of 260mΩ and an extremely low gate-source capacitance, making it ideal for high-speed pulses, where the clamping voltage staying in the same order of magnitude as the operating voltage. These advantages make it useful for high-frequency applications, such as power supplies, automotive power slewing and driving, motor drive and general purpose AC/DC switching. This transistor utilizes a vertical structure which has the gate and drains embedded in the same vertical space. It is a very efficient device, with the low gate-source voltage dropping only 0.5V, despite the high power rating of 17A. It also offers excellent performance at high temperatures, up to 175°C.The high efficiency of the device is created by utilizing a vertical structure combined with gate insulation. This structure offers good performance and working temperatures as well as good low gate-drain capacitance and low gate-source capacitance. When the gate is turned on, electrons travel up to the vertical gate, where a high electric field causes a charge to transfer to the substrate. The brief explanation of the IXFK260N17T workings is that when the gate voltage is VGS is below the threshold voltage, it is said to be in a non-conducting state called the “off state.” In this situation, no current flows through the device. When VGS rises past the threshold and reaches the desired VGS level, it is said to be in the “on state.” In this state, there is an electric field that causes electrons to flow from the source to the drain, allowing current to flow.In summary, the IXFK260N17T is a high-performance and high-current MOSFET device, offering low on-resistance, fast switching speeds and low power losses. Its vertical structure and optimized features make it an excellent choice for high current, low voltage DC and AC switching applications.

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