IXFK170N20T Allicdata Electronics
Allicdata Part #:

IXFK170N20T-ND

Manufacturer Part#:

IXFK170N20T

Price: $ 9.24
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 170A TO-264
More Detail: N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole T...
DataSheet: IXFK170N20T datasheetIXFK170N20T Datasheet/PDF
Quantity: 294
1 +: $ 8.40420
25 +: $ 6.89144
100 +: $ 6.21911
500 +: $ 5.21060
Stock 294Can Ship Immediately
$ 9.24
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Series: GigaMOS™
Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK170N20T MOSFET is a type of field-effect transistor (FET) used as an electrical current switch as a result of its fast switching time. The device is especially used in power conversion and power supply systems. The IXFK170N20T is a single-channel, N-channel MOSFET which is used to replace traditional mechanical relays and switches.The IXFK170N20T is a high-side switch, which means the device has an internal connection from the drain to the positive (+) lead of the power supply. This feature means that this type of MOSFET can be used in a system without a diode in series, due to the fact that the device will not fail to ground if the supply voltage is higher that the drain voltage. In addition, the IXFK170N20T can be used in high-current, high-voltage circuits due to its high peak drain current and drain-source breakdown voltage.In order to operate an IXFK170N20T device, gate-source voltage as well as a gate driver circuit (or different types of MOSFET gate drive circuit) are necessary to turn on and control the device. When a gate drive is applied, the channel width between the source and drain terminals increases and the channel resistance decreases, allowing current to flow from the drain to the source. When the voltage is removed, the device is turned off and the channel between the drain and source is turned off.One of the main advantages of the IXFK170N20T is its fast switching speed, which makes it ideal for applications where fast switching times are needed. This also allows the device to be used as a switch between different circuits, as well as a switch in power management applications. The IXFK170N20T is also relatively cheap and widely available, making it an attractive option for many applications.The IXFK170N20T is a power switch device, and can be used to control the amount of current passing through a circuit. In addition, the device can be used to control the amount of power delivered to a circuit by controlling the drain to source voltage. The device is also capable of protecting a system against overloads and short circuits.In conclusion, the IXFK170N20T is a single-channel, N-channel MOSFET which is used for high-side switching applications in power conversion and power supply systems. With its fast switching times, high drain current and drain-source breakdown voltage capabilities, the device can be used in a wide range of applications including switching circuits, power management applications and protection against short circuits and overloads.

The specific data is subject to PDF, and the above content is for reference

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