IXFR12N100 Allicdata Electronics
Allicdata Part #:

IXFR12N100-ND

Manufacturer Part#:

IXFR12N100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 10A ISOPLUS247
More Detail: N-Channel 1000V 10A (Tc) Through Hole ISOPLUS247™
DataSheet: IXFR12N100 datasheetIXFR12N100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFR12N100 is a high-speed low side logic level MOSFET. This type of MOSFET is very popular among circuit designers, as it offers power efficiency and fast switching parameters. This particular device has a maximum drain current of 100 amperes and a maximum drain-source voltage rating of 600 volts. It is well suited for use in applications where fast switching and low power consumption are desired.

MOSFETs are devices that use an electric field between two layers or interfaces to control the current flow. This arrangement is also called the field effect transistor (FET). MOSFETs are classified into four types: depletion-type, enhancement-type, logic-level, and high-voltage. IXFR12N100 is an enhancement-type device, which means that it requires a voltage applied to its gate terminal in order to turn on the device.

The IXFR12N100 can be used in applications such as load switches, DC/DC converters, and switching power supplies. As a low side switch, the IXFR12N100 can be used to control the current path between two nodes. The drain terminal of the device is connected to the higher voltage node and the source is connected to the lower voltage node, allowing the device to control the current path between the two nodes.

The IXFR12N100 has a dynamic resistance of 4.1 mΩ typically and 10 mΩ at its maximum. This enables it to switch fast and with a low off-state gate leakage current. Its high drain-source breakdown voltage (600 V) allows it to be used in a high voltages system.

In addition, the IXFR12N100 has a low input capacitance of 3.2 pF, which makes it a fast switching device. It has a smaller package with a relatively low price that makes it attractive for use in many high frequency circuits.

The IXFR12N100 has a good temperature range and is rated for operation at -55°C to 175°C. It can withstand a wide range of ambient temperatures, making it an ideal choice for hot and cold applications. The device also has a low gate charge, which makes it suitable for high speed applications.

In conclusion, the IXFR12N100 is a high-speed low side logic level MOSFET. Its features make it ideal for use in high speed and power efficient applications such as load switches, DC/DC converters, and switching power supplies. Its small package size and low price also make it attractive for use in many high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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