Allicdata Part #: | IXFR12N100-ND |
Manufacturer Part#: |
IXFR12N100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 10A ISOPLUS247 |
More Detail: | N-Channel 1000V 10A (Tc) Through Hole ISOPLUS247™ |
DataSheet: | IXFR12N100 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | ISOPLUS247™ |
Supplier Device Package: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFR12N100 is a high-speed low side logic level MOSFET. This type of MOSFET is very popular among circuit designers, as it offers power efficiency and fast switching parameters. This particular device has a maximum drain current of 100 amperes and a maximum drain-source voltage rating of 600 volts. It is well suited for use in applications where fast switching and low power consumption are desired.
MOSFETs are devices that use an electric field between two layers or interfaces to control the current flow. This arrangement is also called the field effect transistor (FET). MOSFETs are classified into four types: depletion-type, enhancement-type, logic-level, and high-voltage. IXFR12N100 is an enhancement-type device, which means that it requires a voltage applied to its gate terminal in order to turn on the device.
The IXFR12N100 can be used in applications such as load switches, DC/DC converters, and switching power supplies. As a low side switch, the IXFR12N100 can be used to control the current path between two nodes. The drain terminal of the device is connected to the higher voltage node and the source is connected to the lower voltage node, allowing the device to control the current path between the two nodes.
The IXFR12N100 has a dynamic resistance of 4.1 mΩ typically and 10 mΩ at its maximum. This enables it to switch fast and with a low off-state gate leakage current. Its high drain-source breakdown voltage (600 V) allows it to be used in a high voltages system.
In addition, the IXFR12N100 has a low input capacitance of 3.2 pF, which makes it a fast switching device. It has a smaller package with a relatively low price that makes it attractive for use in many high frequency circuits.
The IXFR12N100 has a good temperature range and is rated for operation at -55°C to 175°C. It can withstand a wide range of ambient temperatures, making it an ideal choice for hot and cold applications. The device also has a low gate charge, which makes it suitable for high speed applications.
In conclusion, the IXFR12N100 is a high-speed low side logic level MOSFET. Its features make it ideal for use in high speed and power efficient applications such as load switches, DC/DC converters, and switching power supplies. Its small package size and low price also make it attractive for use in many high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFR140N30P | IXYS | 14.06 $ | 0 | MOSFET N-CH 300V 70A ISOP... |
IXFR80N50P | IXYS | 14.36 $ | 9 | MOSFET N-CH 500V 45A ISOP... |
IXFR80N50Q3 | IXYS | 19.56 $ | 1000 | MOSFET N-CH 500V 50A ISOP... |
IXFR21N100Q | IXYS | 13.57 $ | 1000 | MOSFET N-CH 1KV 18A ISOPL... |
IXFR180N06 | IXYS | 13.61 $ | 1000 | MOSFET N-CH 60V 180A ISOP... |
IXFR44N60 | IXYS | 13.71 $ | 1000 | MOSFET N-CH 600V 38A ISOP... |
IXFR24N100 | IXYS | 14.13 $ | 1000 | MOSFET N-CH 1KV 22A ISOPL... |
IXFR20N120P | IXYS | 14.26 $ | 1000 | MOSFET N-CH 1200V 13A ISO... |
IXFR25N90 | IXYS | 14.3 $ | 1000 | MOSFET N-CH 900V 25A ISOP... |
IXFR34N80 | IXYS | 14.32 $ | 1000 | MOSFET N-CH 800V 28A ISOP... |
IXFR27N80Q | IXYS | 14.34 $ | 1000 | MOSFET N-CH 800V 27A ISOP... |
IXFR40N90P | IXYS | 14.57 $ | 1000 | MOSFET N-CH ISOPLUS247N-C... |
IXFR48N60Q3 | IXYS | 14.63 $ | 1000 | MOSFET N-CH 600V 32A ISOP... |
IXFR24N100Q3 | IXYS | 14.63 $ | 1000 | MOSFET N-CH 1000V 18A ISO... |
IXFR50N50 | IXYS | 15.42 $ | 1000 | MOSFET N-CH 500V 43A ISOP... |
IXFR55N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 48A ISOP... |
IXFR24N90Q | IXYS | 16.74 $ | 1000 | MOSFET N-CH 900V ISOPLUS2... |
IXFR90N20Q | IXYS | 16.9 $ | 1000 | MOSFET N-CH 200V ISOPLUS2... |
IXFR26N100P | IXYS | 18.37 $ | 1000 | MOSFET N-CH 1000V 15A ISO... |
IXFR26N120P | IXYS | 19.03 $ | 1000 | MOSFET N-CH 1200V 15A ISO... |
IXFR38N80Q2 | IXYS | 19.65 $ | 1000 | MOSFET N-CH 800V 28A ISOP... |
IXFR30N110P | IXYS | 20.59 $ | 1000 | MOSFET N-CH 1100V 16A ISO... |
IXFR10N100Q | IXYS | 22.13 $ | 1000 | MOSFET N-CH 1000V 9A ISOP... |
IXFR40N50Q2 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 29A ISOP... |
IXFR12N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 10A ISO... |
IXFR100N25 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 87A ISOP... |
IXFR30N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 30A ISOP... |
IXFR75N10Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V ISOPLUS2... |
IXFR80N10Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 76A ISOP... |
IXFR80N15Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 75A ISOP... |
IXFR80N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 71A ISOP... |
IXFR24N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 22A ISOP... |
IXFR26N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 24A ISOP... |
IXFR26N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 23A ISOP... |
IXFR32N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 30A ISOP... |
IXFR52N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V ISOPLUS2... |
IXFR66N50Q2 | IXYS | -- | 1000 | MOSFET N-CH 500V 50A ISOP... |
IXFR15N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH ISOPLUS247 |
IXFR16N90Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH ISOPLUS247 |
IXFR20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH ISOPLUS247 |
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