IXFR26N100P

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FETs (Field Effect Transistors) are a type of transistor that relies on an electric field to control the current. In a FET, a channel of charge carriers acts as a "gate", allowing current to pass through it. The IXFR26N100P is a high voltage, high speed, insulated gate bipolar transistor (IGBT). It is designed to provide excellent control and high speed switching in high power, high current applications.

The IXFR26N100P has a rigorous structure and special insulation measures to ensure reliable high speed switching in high voltage applications. It has a drain-gate voltage rating of 600V and a max junction temperature of 150°C. It is capable of producing a maximum continuous drain current of 26A and a maximum drain-source voltage of 900V. The high power density, low on-resistance, and fast switching characteristic makes the IXFR26N100P an ideal choice for high-current applications.

The IXFR26N100P is a single, insulated-gate bipolar transistor (IGBT) with a maximum frequency of 400 kHz. It uses an insulated metal gate to control the current flowing through the channel. When the gate is at a high voltage, the channel will conduct current. If the gate is at a low voltage, the channel will be in a state of non-conduction. The channel will also contain a charge layer which affects the operation of the transistor.

The working principle of the IXFR26N100P is based on the charge layer as shown in the diagram below. When the gate is at a high voltage, the charge layer will become positive, attracting electrons (the charge carriers) towards it. This will create a current, allowing current to flow through the transistor. When the gate voltage is lowered, the charge layer will become negative, pushing away the charge carriers and reducing the current flowing through the transistor.

The IXFR26N100P can be used in a wide range of applications such as motor control, DC/DC converters, switch mode power supplies, and UPS systems. It is particularly useful for high power, high speed switching, as it can switch up to 400 kHz. The high power density, low on-resistance, and fast switching characteristic makes it an ideal choice for high current applications.

In conclusion, the IXFR26N100P is a high voltage, high speed, insulated gate bipolar transistor (IGBT) designed to provide excellent control and high speed switching in high power, high current applications. It has a rigorous structure and special insulation measures to ensure reliable high speed switching in high voltage applications. The high power density, low on-resistance, and fast switching characteristic makes it an ideal choice for high current applications.

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