IXFR20N100P Discrete Semiconductor Products

Series:	HiPerFET™, PolarP2™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1000V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	640 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	126nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	7300pF @ 25V
FET Feature:	--
Power Dissipation (Max):	230W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	ISOPLUS247™
Package / Case:	ISOPLUS247™

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IXFR20N100P application field and working principleThe IXFR20N100P is a power MOSFET of plastic package. It is designed for high voltage, high speed switching applications at frequencies up to 200 kHz. It is a single-pole, single-throw (SPST) transistor featuring a 20 V drain-source breakdown voltage and a 100 V gate-source breakdown voltage, ideal for applications such as switching of an ignition coil in automotive systems or a wide variety of industrial applications.The IXFR20N100P is an n-channel Enhancement-mode power MOSFET constructed by using DMOS technology. It is also one of the few very-high voltage MOSFETs that are capable of providing adequate power dissipation and yet occupying relatively small footprint on the board.The working principle of the IXFR20N100P is that, when a positive voltage is applied at the gate terminal, it forms an electric field between the gate terminal and the source terminal. The electric field puts the molecules that form the semiconductor material between the two terminals into a directional motion, which moves the majority carriers (electrons) toward the gate terminal and away from the source terminal.The gate voltage is directly proportional to the number of majority carriers between the source terminal and the gate terminal. As the number of carriers increases, the gate voltage also increases and, as the number decreases, so does the gate voltage. This forms a positive feedback loop which results in a sudden increase in the number of carriers (thus a sudden increase in drain-source current) when a minimum threshold voltage is reached.This is how the IXFR20N100P is able to control the drain-source current with very low gate voltage. The gate voltage remains very low and the majority carriers do not accumulate in the semiconductor beyond the level necessary for conduction, which is why the IXFR20N100P is said to have an ‘enhanced’ operation.The IXFR20N100P is an ideal choice for applications that require high-voltage outputs such as switching an ignition coil in an automotive system or where power dissipation is a major concern. It can also be used in applications such as LED lightbar dimmer, LCD backlight control, motor control, and many other high-voltage switching applications where a small and highly reliable device is desired.In summary, the IXFR20N100P is an n-channel Enhancement-mode power MOSFET which is designed for high voltage, high-speed switching applications. Its excellent operating characteristics and reliability make it an ideal choice for many high-voltage switching tasks. Its small package size and low gate voltage requirement make it particularly suitable for applications that require high-voltage outputs and/or where power dissipation is a major concern.

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